Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SB596 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB596 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Low Collector Saturation Voltage :VCE(sat)= -1.7(V)(Max)@IC= -3A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·Complement to Type 2SD526 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications. ·Recommended for 2. |
| Features | ollector-Emitter Breakdown Voltage IC= -50mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -0.5A; VCE= -5V hFE-2 DC Current Gain IC= . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB595 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB595 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 3 | 2SB595 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB502 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB502A |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 6 | 2SB503 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB503A |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 8 | 2SB506 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB506 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB507 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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