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| Part Number | 2SB532 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB532 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High Power Dissipation- : PC= 60W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETE. |
| Features | n Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -80V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -4A; VCE= -5V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -4V 2SB532 MIN TYP. MAX UNIT -80 V -5 V -2.0 V -1.5 V -0.1 mA -0.1 mA 80. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB530 |
INCHANGE |
PNP Transistor |
|
| 2 | 2SB531 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB531 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SB536 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB536 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB536 |
NEC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB537 |
NEC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SB537 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB538 |
INCHANGE |
PNP Transistor |
|
| 10 | 2SB539 |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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