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| Part Number | 2SB1481 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1481 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -3A) ·Complement to Type 2SD2241 ·Minimum Lot-to-Lot variations for robust device performance and reliable opera. |
| Features | n PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -6mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VE. |
| Part Number | 2SB1481 |
| Manufacturer | Toshiba Semiconductor |
| Title | TRANSISTOR |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1481 Switching Applications 2SB1481 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1.5 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −3 A) • Complementary to 2SD2241 Absolute Maximum Ratings (Tc = 25°C) Characte. |
| Features | mperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Base ≈ 4.5 kΩ ≈ 300 Ω Emitter 1 ht. |
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