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2SB1375

Toshiba Semiconductor
2SB1375
Part Number 2SB1375
Manufacturer Toshiba (https://www.toshiba.com/) Semiconductor
Title Silicon PNP Transistor
Description TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat)...
Features (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability...

Datasheet 2SB1375 pdf datasheet - 137.37KB



2SB1375

BLUE ROCKET ELECTRONICS
2SB1375
Part Number 2SB1375
Manufacturer BLUE ROCKET ELECTRONICS
Title SILICON PNP TRANSISTOR
Description TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features ,; 2SD2012 。 Low VCE(sat), High PC, complementary pair with 2.
Features ,; 2SD2012 。 Low VCE(sat), High PC, complementary pair with 2SD2012.  / Applications 。 Audio frequency power amplifier applications. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbre.

Datasheet 2SB1375 pdf datasheet




2SB1375

INCHANGE
2SB1375
Part Number 2SB1375
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- :.
Features herwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -5V ICBO Collector Cutoff Current VCB= -60V ; IE= 0 IEBO Emitter .

Datasheet 2SB1375 pdf datasheet




2SB1375

GME
2SB1375
Part Number 2SB1375
Manufacturer GME
Title Silicon PNP Transistor
Description Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb  High Power Dissipation:PC=25W(.
Features
 Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb
 High Power Dissipation:PC=25W(TC=25℃) Lead-free
 Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Un.

Datasheet 2SB1375 pdf datasheet




2SB1375

SavantIC
2SB1375
Part Number 2SB1375
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissi.
Features ector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-2A.

Datasheet 2SB1375 pdf datasheet





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