| Part Number | 2SB1375 |
| Manufacturer | INCHANGE |
| Title | |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A) ·Complement to Type 2SD2012 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio... |
| Features |
herwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -0.5A ; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -60V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -7V; IC= 0
hFE-1
DC Current Gain
IC= -0.5A ; VCE= -5V
hFE-2
DC Current Gain
IC= -2A ; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -0.5A; VCE= -5V
MIN TYP. MAX UNIT
-60
V
-1.5 V
-1.0 V
-10 μA
-10 μA
100
... |
| Document |
 2SB1375 datasheet pdf (207.02KB)
|
| Distributor |
Bristol Electronics All other distributors |
| Stock | 4850 In Stock |
| Price | No price available |
| BuyNow | (No Longer Stocked Toshiba America Electronic Components 2SB1375) |
| Part Number | 2SB1375 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon PNP Transistor |
| Description | TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat). |
| Features |
(i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability. |
| Document | 2SB1375 datasheet pdf |
| Part Number | 2SB1375 |
| Manufacturer | GME |
| Title | Silicon PNP Transistor |
| Description | Silicon PNP Triple Diffused Type FEATURES Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb High Power Dissipation:PC=25W(. |
| Features |
Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb High Power Dissipation:PC=25W(TC=25℃) Lead-free Complements the 2SD2012. Production specification 2SB1375 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Un. |
| Document | 2SB1375 datasheet pdf |
| Part Number | 2SB1375 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE(SAT)=-1.5V(Max) at IC=-2A,IB=-0.2A ·Collector power dissi. |
| Features |
ector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-2A ;IB=-0.2A IC=-0.5A;VCE=-5V VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IC=-2A. |
| Document | 2SB1375 datasheet pdf |
| Part Number | 2SB1375 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | SILICON PNP TRANSISTOR |
| Description | TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features ，； 2SD2012 。 Low VCE(sat), High PC, complementary pair with 2. |
| Features |
，； 2SD2012 。 Low VCE(sat), High PC, complementary pair with 2SD2012.
/ Applications
。 Audio frequency power amplifier applications.
/ Equivalent Circuit
/ Pinning
1 23
PIN1：Base
PIN 2：Collector
PIN 3：Emitter
/ hFE Classifications & Marking 。See Marking Instructions.
http://www.fsbre. |
| Document | 2SB1375 datasheet pdf |
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