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| Part Number | 2SB1367 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1367 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE(sat)=-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25 ) APPLICATIONS ·With general purpose applications PINNING PIN 1 2 3 Emitter Collector Base Fig.1 simplified outline (TO-220F) and sym. |
| Features | emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=-50mA ;IB=0 IC=-4A ;IB=-0.4A IC=-4A;VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V f=1MHz;VCB=-10V 40 20 MIN -100 SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-. |
| Part Number | 2SB1367 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A) ·Complement to Type 2SD2059 ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio. |
| Features | EO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -4A; IB= -0.4A VBE(on) Base-Emitter On Voltage IC= -4A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -5V hFE-2 DC Current Gain IC= -4A; VCE= -5V hFE-1 Classifications R O Y 40-80 7. |
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Desde 2024. D4U Semiconductor.
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