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| Part Number | 2SB1315 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1315 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD1977 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-55W audio frequency amplif. |
| Features | METER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= -5.0A; IB= -0.5A -2.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -50 μA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -50 μA hFE-1 DC Current Gain IC= -50mA; VCE= -5V 45 hFE-2 DC Current Gain IC= -1A; VCE= -5V 60 320. |
similar datasheet
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|---|---|---|---|---|
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| 2 | 2SB1316 |
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| 3 | 2SB1316 |
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| 4 | 2SB1317 |
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Silicon PNP Transistor |
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| 5 | 2SB1317 |
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| 6 | 2SB1317 |
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| 7 | 2SB1318 |
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| 8 | 2SB1319 |
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| 9 | 2SB1300 |
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| 10 | 2SB1301 |
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Desde 2024. D4U Semiconductor.
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