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| Part Number | 2SB1098 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1098 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE=2000(Min)@ (VCE= -2V, IC= -3A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low speed switching industrial ·Low frequency power amplifier ABSOLUTE MAXIMUM . |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -100μA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -3mA VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -3mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE -1 DC Current Gain IC= -3A; VCE= -2V hFE -2. |
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Desde 2024. D4U Semiconductor.
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