2SB1063 Datasheet. existencias, precio

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2SB1063 SILICON POWER TRANSISTOR


2SB1063
Part Number 2SB1063
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INCHANGE
2SB1063
Part Number 2SB1063
Manufacturer INCHANGE
Title PNP Transistor
Description ·Low Collector Saturation Voltage- : VCE(sat)= -2.0V(Max)@IC= -3A ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD1499 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power amplification. ABSOLUTE MAXIMUM.
Features ltage IC= -3A; IB= -0.3A VBE(on) Base-Emitter On Voltage IC= -3A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -3V; IC= 0 hFE-1 DC Current Gain IC= -20mA; VCE= -5V hFE-2 DC Current Gain IC= -1A; VCE= -5V hFE-3 DC Current Gain IC= -3A; VCE= -5V COB Output Capacitance IE= 0; VCB= -10V; f= 1MHz fT Current-Gain—Bandwidth Product IC= -0.
Panasonic Semiconductor
2SB1063
Part Number 2SB1063
Manufacturer Panasonic Semiconductor
Title Silicon PNP Transistor
Description Power Transistors 2SB1063 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD1499 ■ Features • Extremely satisfactory linearity of the forward current transfer ratio hFE • Wide safe operation area • High transition frequency fT • Full-pack package which can be.
Features
• Extremely satisfactory linearity of the forward current transfer ratio hFE
• Wide safe operation area
• High transition frequency fT
• Full-pack package which can be installed to the heat sink with one screw 16.7±0.3 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 4.2±0.2 4.2±0.2 2.7±0.2 7.5±0.2 φ 3.1±0.1 Solder Dip (4.0) 1.4±0.1 1.3±0.2 0.5+0.2
  –0.1 14.0±0.5 0.8±0.1
■ Absolute Maximum Ratings TC =.

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