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2SA2151 Audio Amplification Transistor

2SA2151


2SA2151
Part Number 2SA2151
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2SA2151

Inchange Semiconductor
2SA2151
Part Number 2SA2151
Manufacturer Inchange Semiconductor
Title POWER TRANSISTOR
Description ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·Good Linearity of hFE ·Complement to Type 2SC6011 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .
Features aturation Voltage IC= -5A; IB= -0.5A ICBO Collector Cutoff Current VCB= -200V ; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE DC Current Gain IC= -3A ; VCE= -4V COB Output Capacitance IE= 0 ; VCB= -10V;f= 1.0MHz fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= -12V 2SA2151 MIN TYP. MAX UNIT -200 V -0.5 V -10 μA -10 μA 50 180 450 pF 20 MHz  hFE Classifications.


2SA2151

Allegro MicroSystems
2SA2151
Part Number 2SA2151
Manufacturer Allegro MicroSystems
Title Audio Amplification Transistor
Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing thermal resistance, and provide higher voltage avalanche breakdown rating. The high power-handling capacity of the TO-3P package allows a smaller footprint on the circuit board design. T.
Features and Benefits ▪ ▪ ▪ ▪ Small package (TO-3P) High power handling capacity, 160 W Improved sound output by reduced on-chip impedance For professional audio (PA) applications, VCEO =
  –200 V versions available ▪ Complementary to 2SC6011 ▪ Recommended output driver: 2SA1668 Description By adapting the Sanken unique wafer-thinner technique, these PNP power transistors achieve power-up by decreasing ther.


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