2SA2040 Datasheet. existencias, precio

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2SA2040 Bipolar Transistor


2SA2040
Part Number 2SA2040
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Sanyo Semicon Device
2SA2040
Part Number 2SA2040
Manufacturer Sanyo Semicon Device
Title PNP / NPN Epitaxial Planar Silicon Transistors
Description w w w . D a t a S h e e t . c o . k r Ordering number : ENN6913 2SA2040/2SC5707 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2040 / 2SC5707 High Current Switching Applications Applications • Package Dimensions unit : mm 2045B [2SA2040 / 2SC5707] 6.5 5.0 4 DC-DC converter.
Features




• Adoption of FBET, MBIT process. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2.3 SANYO : TP Package Dimensions unit : mm 2044B [2SA2040 / 2SC5707] 6.5 5.0 4 2.3 1.5 0.5 5.5 .
Inchange Semiconductor
2SA2040
Part Number 2SA2040
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·Large current capacitance ·High-speed switching ·100% avalanche tested ·High allowable power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·Complementary to 2SC5707 APPLICATIONS ·DC/DC converter,relay drivers,lamp drivers,motor drivers,flash ABSOL.
Features tor-Emitter Saturation Voltage IC= -3.5A; IB= -175mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2.0A; IB= -40mA VBE(sat) Base-Emitter Saturation Voltage IC= -2.0A; IB= -40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 ICBO Collector Cutoff Current VCB= -40V; IE= 0 IEBO Emitter Cutoff Current VEB= -4V; I.

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