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2SA2022 PNP/NPN Epitaxial Planar Silicon Transistors


2SA2022
Part Number 2SA2022
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INCHANGE
2SA2022
Part Number 2SA2022
Manufacturer INCHANGE
Title PNP Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High-speed switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, lamp drivers, motor drivers, strobes. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT.
Features e IC= -1mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= -10uA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2.5A; IB= -0.125A VBE(sat) Base-Emitter Saturation Voltage IC= -2.5A; IB= -0.125A ICBO Collector Cutoff Current VCB= -40V; IE=0 IEBO Emitter Cutoff Current VEB= -4V; IC=0 hFE-1 DC Current Gain IC= -.

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