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| Part Number | 2SA2016 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA2016 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : EN6309D 2SA2016/2SC5569 Bipolar Transistor (-)50V, (-)7A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter sa. |
| Features |
• Adoption of FBET and MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • Ultrasmall package facilitales miniaturization in end products • High allowable power dissipation ( )2SA2016 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Collector-to-Emitter Vol. |
| Part Number | 2SA2016 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:ENN6309A PNP/NPN Epitaxial Planar Silicon Transistors 2SA2016/2SC5569 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2163 [2SA2016/2SC5569] 4.5 1.6 1.5 Features · Adoption of FBET and MBIT processes. · H. |
| Features |
· Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · High-speed switching. · Ultrasmall package facilitales miniaturization in end products. · High allowable power dissipation. 3 0.5 0.4 1.5 3.0 0.75 2 1 0.4 1.0 2.5 4.25max Specifications ( ) : 2SA2016 Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Coll. |
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