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| Part Number | 2SA1887 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA1887 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·Low Collector Saturation Voltage ·Large Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volta. |
| Features | ning Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.25A VBE(sat) Base-Emitter Saturation Voltage IC= -5A; IB= -0.25A ICBO Collector Cutoff Current VCB= -70V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -1V fT Current-Gain—Bandwidth Product IC= -1A; VCE= -1V MIN TYP. MAX UNIT -50 V -0.4 V -1.4 V -1. |
| Part Number | 2SA1887 |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1887 High-Current Switching Applications 2SA1887 Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) at IC = −5 A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage C. |
| Features | appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-09-30 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC cu. |
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| 2 | 2SA1880 |
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| 7 | 2SA1801 |
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| 9 | 2SA1803 |
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| 10 | 2SA1803 |
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Desde 2024. D4U Semiconductor.
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