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| Part Number | 2SA1419 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA1419 |
| Manufacturer | Kexin |
| Title | Transistor |
| Description | SMD Type High-Voltage Switching Applications 2SA1419 Transistors Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector. |
| Features | Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * T. |
| Part Number | 2SA1419 |
| Manufacturer | TY Semiconductor |
| Title | Transistor |
| Description | SMD Type Product specification 2SA1419 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector. |
| Features | Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * T. |
| Part Number | 2SA1419 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor (–)160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP http://onsemi.com Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized . |
| Features |
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s Specifications ( ) : 2SA1419 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) VCBO VCEO VEBO IC ICP. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1411 |
ETC |
Transistor |
|
| 2 | 2SA1411 |
Kexin |
Transistor |
|
| 3 | 2SA1411 |
TY Semiconductor |
Transistor |
|
| 4 | 2SA1412 |
NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR |
|
| 5 | 2SA1412-Z |
NEC |
PNP Transistor |
|
| 6 | 2SA1412-Z |
INCHANGE |
NPN Transistor |
|
| 7 | 2SA1412-Z |
Kexin |
Transistor |
|
| 8 | 2SA1412-Z |
Renesas |
SILICON POWER TRANSISTOR |
|
| 9 | 2SA1413 |
NEC |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR |
|
| 10 | 2SA1413 |
NEC Electronics |
PNP Silicon Transistors |
|
Desde 2024. D4U Semiconductor.
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