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| Part Number | 2SA1235A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA1235A |
| Manufacturer | SeCoS |
| Title | PNP Silicon Plastic Encapsulated Transistor |
| Description | Elektronische Bauelemente 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Low Collector Current Low Collector Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank 2SA1235A-ME Range 150~300 . |
| Features | Low Collector Current Low Collector Power Dissipation CLASSIFICATION OF hFE (1) Product-Rank 2SA1235A-ME Range 150~300 Marking M‧E 2SA1235A-MF 250~500 M‧F SOT-23 A L 3 Top View CB 12 KE 1 D F GH 3 2 J PACKAGE INFORMATION Package MPQ SOT-23 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. 2.80 2.25 1.20 Max. 3.00 2.55 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H . |
| Part Number | 2SA1235A |
| Manufacturer | Rectron |
| Title | BIPOLAR TRANSISTORS |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SA1235A FEATURES * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : -0.2 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range TJ,Tstg: -5. |
| Features | * Power dissipation PCM : 0.2 W(Tamb=25OC) * Collector current ICM : -0.2 A * Collector-base voltage V(BR)CBO : -60 V * Operating and storage junction temperature range TJ,Tstg: -55OC to +150OC MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any Weight: 0.008 gram SOT-23 COLLECTOR 3 1 BASE . |
| Part Number | 2SA1235A |
| Manufacturer | TRANSYS Electronics Limited |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A FEATURES Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage ju. |
| Features | Power dissipation PCM : 0.2 W (Tamb=25℃) TRANSISTOR (PNP) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current -0.2 A ICM : Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Symbol V(BR)CBO V(B. |
| Part Number | 2SA1235A |
| Manufacturer | Galaxy Semi-Conductor |
| Title | Silicon Epitaxial Planar Transistor |
| Description | BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). z z Excellent lineary DC forward current gain. Super mini package for easy mounting. Production specification 2SA1235A Pb Lead-free APPLICATI. |
| Features | z Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). z z Excellent lineary DC forward current gain. Super mini package for easy mounting. Production specification 2SA1235A Pb Lead-free APPLICATIONS z z PNP epitaxial type transistor designed for low frequency. Voltage amplify application. SOT-23 ORDERING INFORMATION Type No. 2SA1235A Marking ME/MF/MG Package. |
| Part Number | 2SA1235A |
| Manufacturer | Isahaya Electronics Corporation |
| Title | Silicon PNP Epitaxial Type Transistor |
| Description | < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forwa. |
| Features |
・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A 2.1 0.425 1.25 0.425 0.5 Unit：ｍｍ 2SA1235A 2.5 1.5 0.5 ・Excellent linearity of DC forward gain ・Small collector to emitter saturation voltage VCE(sat)=-0.3V max 0.65 0.95 APPLICATION For Hybrid IC,small type machine low frequency voltageAmplify application 2.0 1.3 0.3 ① ② ③ ① ② ③ 2.9 1.90 0.65 0.9 1.1 0.95 0.15 0.7 0.8 . |
| Part Number | 2SA1235A |
| Manufacturer | GME |
| Title | Silicon Epitaxial Planar Transistor |
| Description | Production specification Silicon Epitaxial Planar Transistor FEATURES Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free Excellent lineary DC forward current gain. Super mini package for easy mounting. 2SA1235A APPLICATIONS PNP epitaxia. |
| Features |
Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Pb Lead-free Excellent lineary DC forward current gain. Super mini package for easy mounting. 2SA1235A APPLICATIONS PNP epitaxial type transistor designed for low frequency. Voltage amplify application. ORDERING INFORMATION Type No. Marking 2SA1235A ME/MF/MG SOT-23 Package Code SOT-23 MAXIM. |
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|---|---|---|---|---|
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| 2 | 2SA1235-HF |
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