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| Part Number | 2SA1147 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA1147 |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Complement to Type 2SC2707 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXI. |
| Features | -Base Breakdown Voltage IC= -1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A ICBO Collector Cutoff Current VCB= -180V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A ; VCE= -5V hFE-2 DC Current Gain IC= -5A ; VCE= -5V fT Current-Gain—Bandwidth Product IC= -0.5A; VC. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SA1141 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SA1141 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 3 | 2SA1142 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SA1142 |
Inchange Semiconductor |
POWER TRANSISTOR |
|
| 5 | 2SA1144 |
Toshiba |
Silicon PNP Epitaxial Type Transistor |
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| 6 | 2SA1145 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 7 | 2SA1145 |
INCHANGE |
PNP Transistor |
|
| 8 | 2SA1145 |
LGE |
NPN Transistor |
|
| 9 | 2SA1146 |
Toshiba |
Silicon PNP Transistor |
|
| 10 | 2SA1146 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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