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| Part Number | 2SA1096A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SA1096A |
| Manufacturer | Inchange Semiconductor |
| Title | POWER TRANSISTOR |
| Description | ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -60V (Min) ·Good Linearity of hFE ·Complement to Type 2SC2497A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYM. |
| Features | ltage IC= -2mA; IB= 0 -60 V V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA; IE= 0 -70 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -1.5A; IB= -0.15A -1.5 V ICBO Collector Cutoff Current VCB= -20V; IE= 0 -1 μA ICEO Collector Cutoff Current VCE= -10V; IB= 0 -100 μA IEBO Emitter Cutoff Current VEB. |
| Part Number | 2SA1096A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-126 package ·Complement to type 2SC2497/2SC2497A APPLICATIONS ·For low-frequency power amplification PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO PARAMETER Collector-base voltage 2SA1096 VCEO Collector- emitter. |
| Features | IC=-1.5A ;IB=-0.15A IC=-1.5A ;IB=-0.15A VCE=-10V; IB=0 VCB=-20V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IE=0 ; VCB=-20V,f=1MHz CONDITIONS 2SA1096 2SA1096A SYMBOL MIN -50 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V -60 -70 -1.0 -1.5 -1 -100 -10 80 55 150 220 pF MHz V V V µA µA µA V(BR)CBO VCEsat VBEsat ICEO ICBO IEBO hFE COB fT Collector-base breakdown voltage Collector-em. |
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Desde 2024. D4U Semiconductor.
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