2N718A Datasheet. existencias, precio

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2N718A NPN Small Signal General Purpose Amplifiers


2N718A
Part Number 2N718A
Distributor Stock Price Buy
Microsemi Corporation
2N718A
Part Number 2N718A
Manufacturer Microsemi Corporation
Title NPN LOW POWER SILICON TRANSISTOR
Description TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 Devices 2N718A 2N1613 2N1613L Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) Sy.
Features mbol V(BR)CEO V(BR)CER ICBO IEBO Min. Max. Unit Vdc Vdc 10 10 ηAdc ηAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE = 10 Ω Collector-Base Cutoff Current VCB= 60 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc 30 50 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of .
Motorola
2N718A
Part Number 2N718A
Manufacturer Motorola
Title GENERAL PURPOSE TRANSISTOR
Description 2N718A 2N956, 2N1711 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation (a T^ = 25°C Derate above 25°C Total Device Dissipation (S Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N718A Symbol 2N956 2N1.
Features .
CDIL
2N718A
Part Number 2N718A
Manufacturer CDIL
Title NPN SILICON PLANAR TRANSISTOR
Description SYMBOL VALUE Collector Emitter Voltage VCER 50 Collector Base Voltage VCBO 75 Emitter Base Voltage VEBO 7.0 Power Dissipation @Ta=25ºC PD 500 Derate Above 25ºC 2.86 Power Dissipation @ Tc=25ºC PD 1.8 Derate Above 25ºC 10.3 Operating and Storage Junction Tj, Tstg -65 to +200 Te.
Features .

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