Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2N6649 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6649 |
| Manufacturer | TAITRON |
| Title | Darlington Power Transistor |
| Description | 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector-Emitter Voltage 40 60 VEBO Emitter-Base Voltage 5 Collector Current (Continuous) IC Collector Current (Peak) 10 15 IB PD RθJC TJ, TSTG Base Current Total Power Dissipation at TC=25°C Derate above TA=25°C The. |
| Features |
• High Gain Dalington Performance • DC Current Gain hFE = 3000(Typ) @ IC = 5.0A • True Complementary Specifications • RoHS Compliant Mechanical Data Case: Terminals: Weight: TO-3, Metal Can Package Solderable per MIL-STD-750 20 grams (approx) Maximum Ratings (TC=25ºC unless noted otherwise) Symbol Description 2N6383 2N6648 2N6384 2N6649 VCBO Collector-Base Voltage 40 60 VCEO Collector. |
| Part Number | 2N6649 |
| Manufacturer | Central Semiconductor |
| Title | PNP silicon power darington transistor |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6648 |
Microsemi Corporation |
PNP DARLINGTON POWER SILICON TRANSISTOR |
|
| 2 | 2N6648 |
INCHANGE |
PNP Transistor |
|
| 3 | 2N6648 |
TAITRON |
Darlington Power Transistor |
|
| 4 | 2N6648 |
Central Semiconductor |
PNP silicon power darington transistor |
|
| 5 | 2N6603 |
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|
| 6 | 2N6604 |
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HIGH FREQUENCY TRANSISTOR |
|
| 7 | 2N6609 |
ON Semiconductor |
COMPLEMENTARY POWER TRANSISTORS |
|
| 8 | 2N6609 |
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COMPLEMENTARY SILICON POWER TRANSITORS |
|
| 9 | 2N6609 |
NTE |
Silicon PNP Transistor |
|
| 10 | 2N6609 |
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|
Desde 2024. D4U Semiconductor.
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