Part Number | 2N6577 |
Distributor | Stock | Price | Buy |
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Part Number | 2N6577 |
Manufacturer | Seme LAB |
Title | Bipolar NPN Device |
Description | 2N6577 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 29.9 (1.177) 30.4 (1.197) 22.23 (0.875) ma. |
Features | ons without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 . |
Part Number | 2N6577 |
Manufacturer | General Semiconductor |
Title | 15 AMPERE NPN DARLINGTON |
Description | . |
Features | . |
Part Number | 2N6577 |
Manufacturer | SavantIC |
Title | (2N6576 - 2N6578) Silicon Power Transistor |
Description | ·With TO-3 package ·DARLINGTON ·High DC current gain APPLICATIONS ·Power switching ·Audio amplifiers ·Hammer drivers ·Series and shunt regulators PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6576 2N6577 2N6578 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYM. |
Features | N6576 VCEO(SUS) Collector-emitter sustaining voltage 2N6577 2N6578 VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage 2N6576 ICEO Collector cut-off current 2N6577 2N6578 2N6576 ICBO Collector cut-off current 2N6577 2N6578 IEBO hFE-1 hFE-2 hFE-3 hFE-4 VF Emitter cut-off curre. |
Part Number | 2N6577 |
Manufacturer | Motorola |
Title | NPN SILICON POWER DARLINGTON TRANSISTOR |
Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • Replacement for 2N3055 and Driver • High Gain Darlington Performance • Built–in Diode Protection for Reverse Pol. |
Features |
ÎÎÎÎÎÎÎÎÎÎÎΗ Peak
IE
15.25 30.5
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Power Dissipation ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TC = 25_C
Derate above 25_C
PD
120 Watts
0.685
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTemperature Range
TJ, Tstg
– 65 to + 200 _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ. |
similar datasheet
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1 | 2N657 |
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2 | 2N657 |
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5 | 2N6574 |
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6 | 2N6574 |
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7 | 2N6575 |
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8 | 2N6575 |
INCHANGE |
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9 | 2N6576 |
General Semiconductor |
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10 | 2N6576 |
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