2N6511 Datasheet. existencias, precio

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2N6511 Bipolar NPN Device


2N6511
Part Number 2N6511
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RCA
2N6511
Part Number 2N6511
Manufacturer RCA
Title Power Transistor
Description File No.. 848 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ [ID(J8LJD Solid State Division Power Transistors 2N6510-2N6514 High-Voltage, High-Current Silicon N-P-N Power-Switching Transistors For Switching Applications in Industrial Commercial and Military Equipment JEDEC TO-3.
Features a Fast switching speed 1:::1 Epitaxial pi-nu construction " Hermetic steel package-JEDEC TO-3 a Maximum.safe-area-of-operation curves a Thermal-cycling rating chart The RCA-2N6510. -2N6511, -2N6512, -2N6513, and -2N6514° are epitaxial silicon n-p-n power transistors with pi-nu construction. They are especially designed for use in electronic ignition circuits and other applications requiring high.
SavantIC
2N6511
Part Number 2N6511
Manufacturer SavantIC
Title Silicon Power Transistor
Description ·With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive switching circuits PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(T.
Features specified PARAMETER CONDITIONS MIN TYP. 2N6511 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A ;IB=0 250 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.4A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1A VCE=400V; VBE(off)=-1.5V TC=100 VEB=7V; IC=0 1.5 0.1 1.5 0.1 V.

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