2N6051 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2N6051 PNP DARLINGTON POWER SILICON TRANSISTOR


2N6051
Part Number 2N6051
Distributor Stock Price Buy
Comset Semiconductors
2N6051
Part Number 2N6051
Manufacturer Comset Semiconductors
Title (2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS
Description PNP 2N6050 – 2N6051 – 2N6052 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The co.
Features lue 1.17 Unit °C/W 17/10/2012 COMSET SEMICONDUCTORS 1|3 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP 2N6050
  – 2N6051
  – 2N6052 ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) VCE= VCEX =-60 V, VBE=1.5 V VCE= VCEX =-80 V, VBE=1.5 V VCE= VCEX =-100 V VBE=1.5 V VCE= VCEX =-60 V, VBE=1.5 V TC=150°C VCE= VCEX =-80 V, VBE=1.5 V TC=150°C VCE= VCEX =.
Central Semiconductor
2N6051
Part Number 2N6051
Manufacturer Central Semiconductor
Title COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Description The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications. MARKING: FULL PART NUMBER TO-3 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Volt.
Features VEB=5.0V BVCEO IC=100mA, (2N6050, 2N6057) 60 BVCEO IC=100mA, (2N6051, 2N6058) 80 BVCEO IC=100mA, (2N6052, 2N6059) 100 VCE(SAT) IC=6.0A, IB=24mA VCE(SAT) IC=12A, IB=120mA VBE(SAT) IC=12A, IB=120mA VBE(ON) VCE=3.0V, IC=6.0A hFE VCE=3.0V, IC=6.0A 750 hFE VCE=3.0V, IC=12A 100 hfe VCE=3.0V, IC=5.0A, f=1.0kHz 300 fT VCE=3.0V, IC=5.0A, f=1.0MHz 4.0 Cob VCB=10V, IE=0, f=100kHz (PN.
Inchange Semiconductor
2N6051
Part Number 2N6051
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistors
Description ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC = -6A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type 2N6058 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications. ABSOLUTE MAXIMUM RATINGS(TC.
Features .

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2N6050
Seme LAB
Bipolar PNP Device Datasheet
2 2N6050
Comset Semiconductors
(2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS Datasheet
3 2N6050
Central Semiconductor
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Datasheet
4 2N6050
Inchange Semiconductor
Silicon PNP Power Transistors Datasheet
5 2N6050
Solid State
Power Transistor Datasheet
6 2N6052
ON Semiconductor
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTOR Datasheet
7 2N6052
Motorola
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Datasheet
8 2N6052
Microsemi Corporation
PNP DARLINGTON POWER SILICON TRANSISTOR Datasheet
9 2N6052
Comset Semiconductors
(2N6050 - 2N6052) POWER COMPLEMENTARY SILICON TRANSISTORS Datasheet
10 2N6052
NTE
Silicon PNP Transistor Datasheet
More datasheet from Microsemi Corporation
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad