Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2N6043 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6043 |
| Manufacturer | ON Semiconductor |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transistors are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc. |
| Features |
• High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc − VCEO(sus) = 60 Vdc (Min) − 2N6040, 2N6043 = 100 Vdc (Min) − 2N6042, 2N6045 • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc − 2N6043,44 = 2.0 Vdc (Max) @ IC = 3.0 Adc − 2N6042, 2N6045 • Monolithic Construction with Built−In Base−Emitter Shunt Resistors . |
| Part Number | 2N6043 |
| Manufacturer | Motorola |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6040/D Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–. |
| Features | ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ. |
| Part Number | 2N6043 |
| Manufacturer | Central Semiconductor |
| Title | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR 2N6040 and 2N6043 Series types are Complementary Silicon Power Transistors, manufactured by the epitaxial base process, designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C) Collector-Base Voltage Collector-. |
| Features | VBE(OFF)=1.5V VCE=Rated VCEO, VBE(OFF)=1.5V, TC=150°C VCE=Rated VCEO VEB=5.0V IC=100mA (2N6040, 2N6043) IC=100mA (2N6041, 2N6044) IC=100mA (2N6042, 2N6045) IC=4.0A, IB=16mA (2N6040, 2N6041, 2N6043, 2N6044) IC=3.0A, IB=12mA (2N6042, 2N6045) IC=8.0A, IB=80mA IC=8.0A, IB=80mA VCE=4.0V, IC=4.0A VCE=4.0V, IC=4.0A (2N6040, 2N6041, 2N6043, 2N6044) VCE=4.0V, IC=3.0A (2N6042, 2N6045) VCE=4.0V, IC=8.0A MI. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6040 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 2 | 2N6040 |
Motorola |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | 2N6040 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 4 | 2N6040 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 5 | 2N6041 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 6 | 2N6041 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
| 7 | 2N6041 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 8 | 2N6042 |
ON Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 9 | 2N6042 |
Motorola |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 10 | 2N6042 |
Central Semiconductor |
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
|
Desde 2024. D4U Semiconductor.
|