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| Part Number | 2N6030 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N6030 |
| Manufacturer | SavantIC |
| Title | (2N6029 / 2N6030) Silicon PNP Power Transistor |
| Description | ·With TO-3 package ·Complement to type 2N5629 2N5630 ·High power dissipations APPLICATIONS ·For high voltage and high power amplifier applications PINNING PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6029 2N6030 Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL VC. |
| Features | stors 2N6029 2N6030 CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2N6029 IC=-0.2A ;IB=0 2N6030 IC=-10A; IB=-1A IC=-16A ;IB=-4A IC=-10A; IB=-1A IC=-8A ; VCE=-2V VCB=ratedVCBO; IE=0 2N6029 ICEO Collector cut-off current 2N6030 VCE=-60V; IB=0 VCE=ratedVCB VCE=ratedVCB; TC=150 VEB=-7V; IC=0 2N6029 hFE-1 DC current gain 2N6030 hFE-2 COB fT DC current gain Output capacitance Transition fr. |
| Part Number | 2N6030 |
| Manufacturer | Motorola |
| Title | Power Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5630/D High-Voltage Ċ High Power Transistors . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage — VCEO(sus) = 120 Vdc — 2N563. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N6031 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N6031 |
SavantIC |
Silicon Power Transistor |
|
| 3 | 2N6031 |
Central Semiconductor |
PNP SILICON POWER TRANSISTOR |
|
| 4 | 2N6031 |
Motorola |
Power Transistor |
|
| 5 | 2N6032 |
VPT |
NPN High Power Silicon Transistor |
|
| 6 | 2N6032 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 7 | 2N6032 |
Microsemi |
NPN POWER SILICON TRANSISTOR |
|
| 8 | 2N6032 |
Seme LAB |
Bipolar NPN Device |
|
| 9 | 2N6033 |
Seme LAB |
Bipolar NPN Device |
|
| 10 | 2N6033 |
VPT |
NPN High Power Silicon Transistor |
|
Desde 2024. D4U Semiconductor.
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