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| Part Number | 2N5882 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N5882 |
| Manufacturer | Multicomp |
| Title | Complementary Power Transistor |
| Description | 2N5880 & 2N5882 Complementary Power Transistors General-purpose power amplifier and switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Max. |
| Features |
• Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A • Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A Pin 1. Base 2. Emitter Collector(Case) Maximum Ratings Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 E 25.20 26.67 F 0.92 1.09 G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.. |
| Part Number | 2N5882 |
| Manufacturer | NTE |
| Title | Silicon NPN Power Transistor |
| Description | The 2N5882 is a silicon NPN transistor in a TO−3 type package designed for use in general purpose power amplifier and switching applications. Features: D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum. |
| Features | D Low Collector−Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 7A D Excellent DC Current Gain: hFE = 20 − 100 @ IC = 6A Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
| Part Number | 2N5882 |
| Manufacturer | ON Semiconductor |
| Title | Silicon NPN High-Power Transistor |
| Description | ON Semiconductort Silicon NPN High-Power Transistor . . . designed for general–purpose power amplifier and switching applications. 2N5882 ON Semiconductor Preferred Device • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) • DC Current Gain — hFE = 20 (Min) @ IC = 6.0 Adc www.DataS. |
| Features |
ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Rating Symbol VCEO VCB VEB IC IB Max 80 80 15 30 Unit Vdc Vdc Vdc Adc Adc 5.0 Collector Current — Continuous Peak Base Current 5.0 Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range PD 160 0.915 Watts W/_C _C TJ, Tstg –65 to +200 CASE 1 –07 . |
similar datasheet
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|---|---|---|---|---|
| 1 | 2N5880 |
Multicomp |
Complementary Power Transistor |
|
| 2 | 2N5880 |
Savantic |
(2N5879 / 2N5880) Silicon PNP Power Transistors |
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| 3 | 2N5881 |
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| 4 | 2N5881 |
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| 5 | 2N5881 |
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| 6 | 2N5883 |
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| 7 | 2N5883 |
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| 8 | 2N5883 |
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| 9 | 2N5883 |
ON Semiconductor |
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| 10 | 2N5883 |
Savantic |
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Desde 2024. D4U Semiconductor.
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