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2N5660 |
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| Part Number | 2N5660 |
| Manufacturer | Seme LAB |
| Description | 2N5660 Dimensions in mm (inches). 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 12 6.35 (0.250) 8.64 (0.340) Bipolar NPN Device in a Hermetically sealed TO66 Metal Package. Bipolar NPN Device. VCEO = 200V IC = 1A 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 0.71 (0.028) 0.86 (0.034) 11.94 (0.470) 12.70 (0.500) 4.83 (0.190) 5.33 (0.21. |
| Features | . |
| Datasheet |
 2N5660 Data Sheet
PDF 10.89KB |
| Distributor | Stock | Price | Buy |
|---|
2N5660 |
| Part Number | 2N5660 |
| Manufacturer | Microsemi Corporation |
| Title | NPN POWER SILICON TRANSISTOR |
| Description | TECHNICAL DATA NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/454 Devices 2N5660 2N5661 2N5662 2N5663 Qualified Level JAN, JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current S. |
| Features | +1000C TO-5* 2N5662, 2N5663 *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Breakdown Voltage IC = 10 mAdc, RBE = 100Ω Emitter-Base Breakdown Voltage IE = 10 µAdc 2N5660, 2N5662 2N5661, 2N5663 2N5660, 2N5662 2N5661, 2N5663 V. |
2N5660 |
| Part Number | 2N5660 |
| Manufacturer | SavantIC |
| Title | (2N5660 / 2N5661) Silicon NPN Power Transistors |
| Description | ·With TO-66 package ·High breakdown voltage APPLICATIONS ·High speed switching and linear amplifier ·High-voltage operational amplifiers ·Switching regulators ,converters ·Deflection stages and high fidelity amplifers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N5660 2N5661 F. |
| Features | om Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage 2N5660 IC=10mA ; IB=0 2N5661 IE=10µA ; IC=0 IC=1A; IB=0.1A IC=2A; IB=0.4A IC=1A ;IB=0.1A IC=2A; IB=0.4A VCE=200V;VBE(off)=1.5V CONDITIONS SYMBOL 2N5660 2N5661 MIN 200 TYP. MAX UNIT V(BR)CEO V 300 6 0.4 0.8 1.2 1.5 V V V V V V(BR)EBO VCEsat-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5661 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
|
| 2 | 2N5661 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N5661 |
Semicoa Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2N5661 |
SavantIC |
(2N5660 / 2N5661) Silicon NPN Power Transistors |
|
| 5 | 2N5661 |
INCHANGE |
Silicon NPN Power Transistor |
|
| 6 | 2N5662 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
|
| 7 | 2N5662 |
Seme LAB |
Bipolar NPN Device |
|
| 8 | 2N5662 |
Semicoa Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2N5663 |
Seme LAB |
Bipolar NPN Device |
|
| 10 | 2N5663 |
Microsemi Corporation |
NPN POWER SILICON TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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