Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2N5306 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N5306 |
| Manufacturer | Central Semiconductor |
| Title | NPN Transistor |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com . |
| Features | . |
| Part Number | 2N5306 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Darlington Transistor |
| Description | 2N5306 Discrete POWER & Signal Technologies 2N5306 C BE TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO. |
| Features | ation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max 2N5306 625 5.0 83.3 200 Units mW mW/ °C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 2N5306 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5301 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 2 | 2N5301 |
Seme LAB |
Bipolar NPN Device |
|
| 3 | 2N5301 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
|
| 4 | 2N5301 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
| 5 | 2N5301 |
Multicomp |
Bipolar Transistor |
|
| 6 | 2N5301 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N5301 |
Micross |
N-CHANNEL JFET |
|
| 8 | 2N5301 |
Toshiba |
SILICON NPN Transistor |
|
| 9 | 2N5302 |
ON Semiconductor |
POWER TRANSISTORS |
|
| 10 | 2N5302 |
SSDI |
NPN SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|