Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2N4427 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N4427 |
| Manufacturer | Microsemi Corporation |
| Title | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Description | Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector. |
| Features |
• • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz 1. Emitter 2. Base 3. Collector TO-39 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequ. |
| Part Number | 2N4427 |
| Manufacturer | NXP |
| Title | Silicon planar epitaxial overlay transistors |
| Description | NPN overlay transistors in TO-39 metal packages with the collector connected to the case. The devices are primarily intended for class-A, B or C amplifiers, frequency multiplier and oscillator circuits. PINNING - TO-39/1 PIN 1 2 3 emitter base collector handbook, halfpage 2N3866; 2N4427 APPLICATION. |
| Features | 1 1 Gp (dB) >10 >10 η (%) >45 >50 collector current (DC) average collector current total power dissipation transition frequency junction temperature measured over any 20 ms period up to Tmb = 25 °C IC = 50 mA; VCE = 15 V; f = 200 MHz open collector − − − − − 500 − 3.5 2.0 0.4 0.4 3.5 − 200 V V A A W MHz °C open base − − 30 20 V V PARAMETER collector-emitter voltage CONDITIONS RBE = 10 Ω − − 55 40 . |
| Part Number | 2N4427 |
| Manufacturer | ASI |
| Title | NPN SILICON HIGH FREQUENCY TRANSISTOR |
| Description | The ASI 2N4427 is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 20 V PDISS 3.5 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 50 °C/W 1 = EMITTER 2 = BASE 3 = COLLECTOR NONE CHARACTERISTICS TC = 25 °C SYMBO. |
| Features | . |
| Part Number | 2N4427 |
| Manufacturer | Advanced Power Technology |
| Title | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS |
| Description | Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector. |
| Features |
• • • • • • • Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz TO-39 1. Emitter 2. Base 3. Collector www.DataSheet4U.com DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitabl. |
| Part Number | 2N4427 |
| Manufacturer | Central Semiconductor Corp |
| Title | SILICON NPN RF TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR 2N4427 is a silicon NPN epitaxial planar RF transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO. |
| Features | =0, f=1.0MHz VCC=12V, Pin=100mW, f=175MHz VCC=12V, Pout=1.0W, f=175MHz VCC=12V, Pout=1.0W, f=175MHz 40 20 10 5.0 500 10 50 MAX 100 5.0 20 100 0.5 200 4.0 100 UNITS V V V mA mA W W °C UNITS μA mA μA μA V V V MHz pF dB % mW R1 (4-June 2013) 2N4427 SILICON NPN RF TRANSISTOR TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER w w w. c e n t r a l. |
| Part Number | 2N4427 |
| Manufacturer | Motorola |
| Title | HIGH FREQUENCY TRANSISTOR |
| Description | 2N4427 CASE 79-02, STYLE 1 TO-39 (TO-205AD) HIGH FREQUENCY TRANSISTOR NPN SILICON 4U MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation. |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N442 |
Motorola |
PNP Transistor |
|
| 2 | 2N4424 |
ETC |
SILICON TRANSISTORS |
|
| 3 | 2N4424 |
Central Semiconductor |
SILICON NPN TRANSISTORS |
|
| 4 | 2N4428 |
Advanced Semiconductor |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 5 | 2N4428 |
Motorola |
NPN SILICON RF POWER TRANSISTOR |
|
| 6 | 2N4429 |
Advanced Semiconductor |
NPN SILICON RF POWER TRANSISTOR |
|
| 7 | 2N4400 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
| 8 | 2N4400 |
TAITRON |
Small Signal General Purpose NPN Transistors |
|
| 9 | 2N4400 |
NTE |
Silicon NPN Transistor |
|
| 10 | 2N4400 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|