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| Part Number | 2N4341 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N4341 |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -50V InterFET 2N4340 and 2N4341 are very low leakage mid-gain JFETs targeted for sensitive amplifier stages for mid-frequencies designs. Gate leakages are less than 1pA at room temperatures. Proprietary InterFET processes yield exceptionally high radiation tolerance. Ordering Information Custom. |
| Features |
• InterFET N0016H Geometry • Low gate leakage: < 1pA typical @40V • Low CISS: 3pF typical • Typical noise: 3.5 nV/√Hz • Typical gain: 2mS • Typical cutoff voltage: -2.5V • High radiation tolerance • RoHS, REACH, CMR compliant • Custom test and binning options available • SMT, TH, and bare die package options • Edge case SPICE modeling: InterFET SPICE Industry Standard Crosses • 2SK40, 2SK105, SST2. |
| Part Number | 2N4341 |
| Manufacturer | Central Semiconductor |
| Title | N-Channel MOSFET |
| Description | The CENTRAL SEMICONDUCTOR 2N4338 Series devices are silicon N-Channel JFETs mounted in a hermetically sealed metal case designed for low level, low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Gate-Drain Voltage Gate-Source Voltage Drain-Source Vol. |
| Features | . |
| Part Number | 2N4341 |
| Manufacturer | Calogic LLC |
| Title | N-Channel JFET |
| Description | N-Channel JFET Low Noise Amplifier CORPORATION 2N4338 – 2N4341 FEATURES ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temp. |
| Features | ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise noted) Gate-Source or Gate-Drain Voltage . . . . . . . . . . . . . . . . -50V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Storage Temperature Range . . . . . . . . . . . . . -65oC to +200oC Operating Temperature Range . . . . . . . . . . . -55oC to +175oC Lead Temperature (Soldering, 10sec) . . . . . . . .. |
| Part Number | 2N4341 |
| Manufacturer | Siliconix |
| Title | N-Channel JFET |
| Description | The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is herme. |
| Features | D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA Benefits D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification Applications D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector . |
| Part Number | 2N4341 |
| Manufacturer | Vishay |
| Title | N-Channel JFETs |
| Description | The 2N4338/4339/4340/4341 n-channel JFETs are designed for sensitive amplifier stages at low- to mid-frequencies. Low cut-off voltages accommodate low-level power supplies and low leakage for improved system accuracy. The TO-206AA (TO-18) package is hermetically sealed and suitable for military pro. |
| Features | D Low Cutoff Voltage: 2N4338 <1 V D High Input Impedance D Very Low Noise D High Gain: AV = 80 @ 20 mA BENEFITS D Full Performance from Low-Voltage Power Supply: Down to 1 V D Low Signal Loss/System Error D High System Sensitivity D High-Quality Low-Level Signal Amplification APPLICATIONS D High-Gain, Low-Noise Amplifiers D Low-Current, Low-Voltage Battery-Powered Amplifiers D Infrared Detector . |
similar datasheet
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| 1 | 2N4340 |
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