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2N40-V |
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| Part Number | 2N40-V |
| Manufacturer | UTC |
| Description | The UTC 2N40-V is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) ≤ 8.0 Ω @ VG. |
| Features |
* RDS(ON) ≤ 8.0 Ω @ VGS=10V, ID=1.25A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL Power MOSFET ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N40L-TM3-T 2N40G-TM3-T 2N40L-TN3-R 2N40G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 1 2 3 G D S G D S Packing Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2024 Unisonic Technologies Co., Ltd 1 of 8 QW-R205-540.B 2N40-V Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise s. |
| Datasheet |
 2N40-V Data Sheet
PDF 680.73KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N40 |
ART CHIP |
N-Channel MOSFET |
|
| 2 | 2N40 |
Unisonic Technologies |
N-Channel Power MOSFET |
|
| 3 | 2N4000 |
Seme LAB |
Bipolar NPN Device |
|
| 4 | 2N4001 |
Seme LAB |
Bipolar NPN Device |
|
| 5 | 2N4002 |
SEMTECH |
PNP Epitaxial Silicon Transistor |
|
| 6 | 2N4003 |
SEMTECH |
PNP Epitaxial Silicon Transistor |
|
| 7 | 2N4003K |
Weitron Technology |
N-Channel Enhancement Mode Power MOSFET |
|
| 8 | 2N4003NLT1 |
WILLAS |
Small Signal MOSFET |
|
| 9 | 2N4006 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|
| 10 | 2N4007 |
Crystalonics |
(2N4006 - 2N4011) Silicon Epitaxial Junction PNP Switching Transistor |
|
Desde 2024. D4U Semiconductor.
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