| Part Number | 2N3904 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Title | Bipolar Transistors - BJT BJT, TO-92, 40V, 200mA, NPN |
| Description | NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. PINNING PIN 1 2 3 collector base emitter 2N3904 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum R... |
| Features |
• Low current (max. 200 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching. DESCRIPTION NPN switching transistor in a TO-92; SOT54 plastic package. PNP complement: 2N3906. PINNING PIN 1 2 3 collector base emitter 2N3904 DESCRIPTION 1 handbook, halfpage 2 3 1 2 3 MAM279 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. PARAMETER collector-base voltage collector-emitter voltage em... |
| Document |
 2N3904 datasheet pdf (45.55KB)
|
| Distributor |
Mouser Electronics All other distributors |
| Stock | 21458 In Stock |
| Price | 1 units: 0.1 USD 10 units: 0.076 USD 100 units: 0.063 USD 500 units: 0.051 USD 1000 units: 0.044 USD 4000 units: 0.033 USD 8000 units: 0.021 USD 48000 units: 0.018 USD
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| BuyNow |
 Buy Now (Manufacturer a Diotec Semiconductor AG 2N3904) |
| Part Number | 2N3904 |
| Manufacturer | Motorola |
| Title | NPN Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors NPN Silicon COLLECTOR 3 2N3903 2N3904* *Motorola Preferred Device 2 BASE 1 E. |
| Features |
. |
| Document | 2N3904 datasheet pdf |
| Part Number | 2N3904 |
| Manufacturer | ON Semiconductor |
| Title | NPN Transistor |
| Description | General Purpose Transistors NPN Silicon 2N3903, 2N3904 Features • Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 . |
| Features |
• Pb−Free Packages are Available* DATA SHEET www.onsemi.com COLLECTOR 3 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C VCEO. |
| Document | 2N3904 datasheet pdf |
| Part Number | 2N3904 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Amplifier |
| Description | This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amp. |
| Features |
. |
| Document | 2N3904 datasheet pdf |
| Part Number | 2N3904 |
| Manufacturer | Multicomp |
| Title | NPN Transistor |
| Description | Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°. |
| Features |
• NPN silicon planar switching transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • General purpose switching and amplifier applications. TO-92 Plastic Package Dimensions A B C D E F G H K Minimum 4.32 4.45 3.18 0.41 0.35 1.14 12.70 Maxim. |
| Document | 2N3904 datasheet pdf |
| Part Number | 2N3904 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2N3904 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . FEATURES . Low Leakage Current :. |
| Features |
. Low Leakage Current
: ICEV=50nA(Max.), I B EV=-50nA(Max. @ VCE=30V, Vbe=-3V
. Excellent DC Current Gain Linearity . Low Saturation Voltage
: V C E(sat)=0.3V(Max.) @ I c=50mA, lB=5mA . Low Collector Output Capacitance
: C b=4pF(Max.) @ V C B=5V . Complementary to 2N3906
Unit in mm
1. EMITTER 2. BA. |
| Document | 2N3904 datasheet pdf |
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