Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2N3773 |
| Part Number | 2N3773 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR POWER TRANSISTOR |
| Description | Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range SYMBOL VCBO VCEO VCEX VEBO IC IB PD T. |
| Features | . |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | Comset Semiconductor |
| Title | NPN Power Transistor |
| Description | NPN 2N3773 HIGH POWER TRANSISTOR The 2N3773 is silicon planar NPN transistor in Jedec TO-3 metal case. They are intended for linear amplifiers and inductive switching applications. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO VCEX IC ICM IB IBM Pt TJ TStg Collector-Emitter Vol. |
| Features | eakdown collector current Test Condition(s) Min 140 15 5 1.5 Typ - Max 2 2 Unit V mA mA IC= 200 mA, IB = 0 VCE= 140 V, IB= 0 VCE= 140 V, VBE= -1.5V VCE= 140 V, VBE= -1.5V Tcase = 150°C VEB= 7 V, IC= 0 IC= 8 A, VCE= 4 V IC= 16 A, VCE= 4 V IC= 8 A, IB= 800 mA IC= 16 A, IB= 3.2 A IC= 8 A, VCE= 4 V VCE= 100 V, ts = 1s 10 5 60 1.4 4 2.2 mA V V A (*) Pulse Duration = 300 µs, Duty Cycle <= 2% 21/. |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | ON Semiconductor |
| Title | NPN Power Transistors |
| Description | 2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC−DC converters or inverters. Features • High Saf. |
| Features |
• High Safe Operating Area (100% Tested) 150 W @ 100 V • Completely Characterized for Linear Operation • High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A • For Low Distortion Complementary Designs • This is a Pb−Free Device MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector − Emitter Voltage Collector − Emi. |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | UTC |
| Title | COMPLEMENTARY SILICON TRANSISTORS |
| Description | UTC 2N3773/2N6099 COMPLEMENTARY SILICON TRANSISTORS The 2N3773/2N6099 are power-base power transistors designed for high power audio, disk head positions and other linear applications. These device can be used in power switching circuits such as relay or solened drivers, DC to DC converters or inver. |
| Features | *High safe operating area(100 tested) 150W and 100V *Complement Characterized for linear operation *High DC Current Gain and low saturation voltage Hfe=15(8A 4V) Vce(sat)=1.4V(Ic=8A,Ib=0.8A) *For Low Distortion Complementary Designs TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified ) PARAMETERS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-emitte. |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | Central Semiconductor |
| Title | Silicon power Transistor |
| Description | Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com . |
| Features | . |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | TRANSYS |
| Title | NPN SILICON PLANAR POWER TRANSISTOR |
| Description | Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak (1) Base Current Continuous Peak (1) Power Dissipation @ Tc=25ºC Derate Above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rt. |
| Features | E(off)=1.5V Tc=150ºC VCE=140V, VBE(off)=1.5V VCB=140V, IE=0 VBE=7V, IC=0 IC=8A, VCE=4V IC=16A, VCE=4V IC=8A, IB=800mA IC=16A, IB=3.2A IC=8A, VCE=4V MIN 140 160 150 MAX UNITS V V V mA mA mA mA mA SYMBOL VCBO VCEO VCEX VEBO IC IB PD Tj, Tstg www.DataSheet.net/ VALUE 160 140 160 7 16 30 4 15 150 0.855 - 65 to +200 UNITS V V V V A A A A W W/ºC ºC 10 2.0 10 2.0 5.0 60 1.4 4.0 2.2 Collector Cut Off. |
2N3773 |
| Part Number | 2N3773 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Excellent Safe Operating Area ·High DC Current Gain-hFE=15(Min)@IC = 8A ·Low Saturation Voltage- : VCE(sat)= 1.4V(Max)@ IC = 8A ·Complement to Type 2N6609 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. INCHANGE Semiconductor 2N3773 APPL. |
| Features | Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case isc website：www.iscsemi.com MAX UNIT 1.17 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2N3773 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3771 |
ON Semiconductor |
High Power NPN Silicon Power Transistors |
|
| 2 | 2N3771 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 3 | 2N3771 |
Motorola |
HIGH-POWER NPN SILICON TRANSISTORS |
|
| 4 | 2N3771 |
Microsemi Corporation |
(2N3771 / 2N3772) NPN HIGH POWER SILICON TRANSISTOR |
|
| 5 | 2N3771 |
INCHANGE |
NPN Transistor |
|
| 6 | 2N3771 |
NTE |
Silicon NPN Transistor |
|
| 7 | 2N3771 |
SavantIC |
Silicon NPN Power Transistors |
|
| 8 | 2N3771 |
Central Semiconductor |
NPN POWER TRANSISTOR |
|
| 9 | 2N3772 |
STMicroelectronics |
HIGH POWER NPN SILICON TRANSISTOR |
|
| 10 | 2N3772 |
ON Semiconductor |
High Power NPN Silicon Power Transistors |
|
Desde 2024. D4U Semiconductor.
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