2N3634 |
Part Number | 2N3634 |
Manufacturer | Motorola |
Title | HIGH VOLTAGE TRANSISTOR |
Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation T/ = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 2N3634 2N3636 Symbo. |
Features | . |
2N3634 |
Part Number | 2N3634 |
Manufacturer | Central Semiconductor |
Title | SILICON PNP TRANSISTORS |
Description | The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continu. |
Features | . |
2N3634 |
Part Number | 2N3634 |
Manufacturer | ON Semiconductor |
Title | Low Power Transistors |
Description | 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L U. |
Features |
• MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol 2N3634/L 2N3636/L 2N3635/L 2N3637/L Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous VCEO VCBO VEBO IC −140 −175 −140 −175 −5.0 1.0 Vdc Vdc Vdc Adc Total Device Dissipation @ TA =. |
2N3634 |
Part Number | 2N3634 |
Manufacturer | Microsemi Corporation |
Title | PNP SILICON AMPLIFIER TRANSISTOR |
Description | TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L Qualified Level JAN JANTX JANTXV JANS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current T. |
Features | er Breakdown Current IC = 10 mAdc Collector-Base Cutoff Current VCB = 100 Vdc VCB = 140 Vdc Emitter-Base Cutoff Current VEB = 3.0 Vdc VEB = 5.0 Vdc Collector-Emitter Cutoff Current VCE = 100 Vdc 2N3634, 2N3635 2N3636, 2N3637 V(BR)CEO 140 175 100 10 50 10 10 Vdc ηAdc µAdc ηAdc µAdc µAdc ICBO 2N3634, 2N3635 IEBO ICEO 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 68. |
2N3634 |
Part Number | 2N3634 |
Manufacturer | TT |
Title | SILICON PNP TRANSISTOR |
Description | SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage . |
Features | . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3630 |
SSDI |
NPN Transistor | |
2 | 2N3631 |
Siliconix |
n-channel MOSFET | |
3 | 2N3632 |
Microsemi Corporation |
RF & MICROWAVE TRANSISTORS | |
4 | 2N3632 |
Motorola |
NPN silicon RF Power transistors | |
5 | 2N3632 |
New Jersey Semi-Conductor |
RF & MICROWAVE TRANSISTORS | |
6 | 2N3634CSM |
Seme LAB |
PNP SILICON TRANSISTOR | |
7 | 2N3634L |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
8 | 2N3634L |
ON Semiconductor |
Low Power Transistors | |
9 | 2N3635 |
Microsemi Corporation |
PNP SILICON AMPLIFIER TRANSISTOR | |
10 | 2N3635 |
Motorola |
HIGH VOLTAGE TRANSISTOR |