2N3460 |
Part Number | 2N3460 |
Manufacturer | InterFET |
Description | The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable for military applications. Gate/Case . |
Features |
• InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purpose Amplifiers Description The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermetically sealed and suitable f. |
Datasheet |
2N3460 Data Sheet
PDF 481.50KB |
Distributor | Stock | Price | Buy |
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2N3460 |
Part Number | 2N3460 |
Manufacturer | Central Semiconductor |
Title | N-Channel FET |
Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
Features | . |
2N3460 |
Part Number | 2N3460 |
Manufacturer | Motorola |
Title | LOW-FREQUENCY / LOW NOISE JFET |
Description | MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG . v GS lG PD Tstg Value 50 50 10 300 1.7 -65 to +175 Unit Vdc Vdc mA mW mW/°C °C 2N3458 2N3459 2N3460 CASE 22-03, STYLE 4 TO-18 (. |
Features | . |
2N3460 |
Part Number | 2N3460 |
Manufacturer | Siliconix |
Title | n-channel JFET |
Description | n-channel JFETs designed for • • • • Small-Signal Low Noise Amplifiers H Performance Curves NP See Section 4 BENEFITS • Operates from High Supply Voltages BVGSS> 50 V *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage (Note 1) ___ ... .. -50 V Gate Current ..... |
Features | nductance 2500 10.000 1500 Common-Source Output Conductance 35 6000 20 Common-Source Output Capacitance 5 5 Common-Source Input Capacitance 18 18 110) 161 Noise Figure 6 4 2N3460 Min M.. -0.25 -0.5 -50 Unit "A pA V Test Conditions VGS= -30 V, VOS = a a lG = -1 p.A, VOS = 1 "A VOS=20V,VGS" ( I 1-21 IVI -1.8 V VOS=20V,iO=lp,/'l., 0.2 1.0 mA VOS ;- 20V,VGS=O 800 4500 VOS ~. |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2N3467 |
Semicoa Semiconductor |
PNP Transistor | |
2 | 2N3467 |
Seme LAB |
Bipolar PNP Device | |
3 | 2N3467 |
Central Semiconductor |
PNP TRANSISTORS | |
4 | 2N3467 |
Motorola |
SWITCHING TRANSISTOR | |
5 | 2N3467 |
Microsemi Corporation |
(2N3467 / 2N3468) PNP SILICON SWITCHING TRANSISTOR | |
6 | 2N3467L |
Semicoa Semiconductor |
PNP Transistor | |
7 | 2N3467L |
Microsemi Corporation |
(2N3467L / 2N3468L) PNP SILICON SWITCHING TRANSISTOR | |
8 | 2N3468 |
Semicoa Semiconductor |
PNP Transistor | |
9 | 2N3468 |
Seme LAB |
Bipolar PNP Device | |
10 | 2N3468 |
NES |
PNP Switching Transistor |