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2N3458 |
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| Part Number | 2N3458 |
| Manufacturer | Central Semiconductor (https://www.centralsemi.com/) |
| Description | 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 . |
| Features | . |
| Datasheet |
 2N3458 Data Sheet
PDF 68.57KB |
| Distributor | Stock | Price | Buy |
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2N3458 |
| Part Number | 2N3458 |
| Manufacturer | InterFET |
| Title | N-Channel JFET |
| Description | The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N3460 has a cutoff voltage of less than 1.8V ideal for low-level power supplies. The TO-18 package is hermeticall. |
| Features |
• InterFET N0016H Geometry • InterFET N0032H Geometry (2N3458) • Low Noise: 5 nV/√Hz Typical • High Gain: 7.5mS Typical (2N3458) • Low Cutoff Voltage: 2N3460 < 1.8V • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • General Purpose Amplifiers Description The -50V InterFET 2N3458, 2N3459, and 2N3460 are targeted for sensitive amplifier stages for midfrequencies designs. Gate l. |
2N3458 |
| Part Number | 2N3458 |
| Manufacturer | Motorola |
| Title | LOW-FREQUENCY / LOW NOISE JFET |
| Description | MAXIMUM RATINGS Rating Drain-Gate Voltage Gate-Source Voltage Gate Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG . v GS lG PD Tstg Value 50 50 10 300 1.7 -65 to +175 Unit Vdc Vdc mA mW mW/°C °C 2N3458 2N3459 2N3460 CASE 22-03, STYLE 4 TO-18 (. |
| Features | . |
2N3458 |
| Part Number | 2N3458 |
| Manufacturer | Siliconix |
| Title | n-channel JFET |
| Description | n-channel JFETs designed for • • • • Small-Signal Low Noise Amplifiers H Performance Curves NP See Section 4 BENEFITS • Operates from High Supply Voltages BVGSS> 50 V *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage (Note 1) ___ ... .. -50 V Gate Current ..... |
| Features | nductance 2500 10.000 1500 Common-Source Output Conductance 35 6000 20 Common-Source Output Capacitance 5 5 Common-Source Input Capacitance 18 18 110) 161 Noise Figure 6 4 2N3460 Min M.. -0.25 -0.5 -50 Unit "A pA V Test Conditions VGS= -30 V, VOS = a a lG = -1 p.A, VOS = 1 "A VOS=20V,VGS" ( I 1-21 IVI -1.8 V VOS=20V,iO=lp,/'l., 0.2 1.0 mA VOS ;- 20V,VGS=O 800 4500 VOS ~. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3459 |
Motorola |
LOW-FREQUENCY / LOW NOISE JFET |
|
| 2 | 2N3459 |
InterFET |
N-Channel JFET |
|
| 3 | 2N3459 |
Central Semiconductor |
N-Channel FET |
|
| 4 | 2N3459 |
Siliconix |
n-channel JFET |
|
| 5 | 2N340 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 6 | 2N341 |
New Jersey Semi-Conductor |
N-P-N GROWN SILICON TRANSISTORS |
|
| 7 | 2N3410DCSM |
Semelab Plc |
Dual Bipolar NPN Devices |
|
| 8 | 2N3414 |
Micro Electronics |
NPN SILICON TRANSISTOR |
|
| 9 | 2N3414 |
Central Semiconductor |
NPN SILICON TRANSISTOR |
|
| 10 | 2N3415 |
Fairchild Semiconductor |
NPN General Purpose Amplifier |
|
Desde 2024. D4U Semiconductor.
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