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2N3330 |
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| Part Number | 2N3330 |
| Manufacturer | InterFET |
| Description | The 20V InterFET 2N3330 and 2N3331 are targeted for data switches and chopper designs. Gate leakages are typically less than 1nA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Drain Gate 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Drain 3 Gate 2 S. |
| Features |
• InterFET P0032F Geometry • Typical Noise: 10 nV/√Hz • Low Ciss: 3.2pF Typical • RoHS Compliant • SMT, TH, and Bare Die Package options. Applications • Choppers • Data Switches • Commutators Description The 20V InterFET 2N3330 and 2N3331 are targeted for data switches and chopper designs. Gate leakages are typically less than 1nA at room temperatures. The TO-72 package is hermetically sealed and suitable for military applications. Drain Gate 2 Source TO-72 Bottom View 3 4 Case 1 Source 1 Drain 2 SOT23 Top View 3 Gate TO-92 Bottom View Drain 3 Gate 2 Source 1 Product Summary Parameters. |
| Datasheet |
 2N3330 Data Sheet
PDF 397.59KB |
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2N3330 |
| Part Number | 2N3330 |
| Manufacturer | Motorola |
| Title | JFET AMPLIFIER |
| Description | 2N3330 MAXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Gate Current Total Device Dissipation (d T/ = 25°C Derate above 25°C Storage Temperature Range Symbol VDG vgsr •g Pd Tstg Value 20 20 10 0.3 2.0 - 65 to + 200 Unit Vdc Vdc mAdc Watts mW/°C °C ELECTRICAL CHARACTERISTICS. |
| Features | . |
2N3330 |
| Part Number | 2N3330 |
| Manufacturer | Siliconix |
| Title | p-channel JFET |
| Description | p-channel JFETs designed for • • • • Small-Signal Amplifiers • Analog Multipliers • Modulators H Performance Curves PC See Section 4 BENEFITS • Ease of Amplifier Design I DSS & Gfs Closely Specified *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain and Gate-Source Voltage (Note 1) . 20 V Gate Cur. |
| Features | Reverse Transfer Conductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Input Capacitance Noise Figure Noise Figure 2N3329 Min Mox 0.01 '0 20 5 -, -3 1000 0.2 0' 20 '000 2000 900 20 3 2N3330 Min Mox 0.01 10 20 2N3331 Min M" 0.01 '0 20 6 -2 -6 800 8 -5 -'5 600 0.2 0.2 0.' 0.' 40 100 '500 3000 2000 4000 1350 1800 20 20 3 4 2N3332 Min M" . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3331 |
InterFET |
P-Channel JFET |
|
| 2 | 2N3331 |
Siliconix |
p-channel JFET |
|
| 3 | 2N3332 |
Siliconix |
p-channel JFET |
|
| 4 | 2N3300 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 5 | 2N3300 |
Central |
Small Signal Transistors |
|
| 6 | 2N3300 |
Seme LAB |
Bipolar NPN Device |
|
| 7 | 2N3300 |
New Jersey Semi-Conductor |
Transistor |
|
| 8 | 2N3301 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
| 9 | 2N3301 |
Central Semiconductor |
Small Signal Transistors |
|
| 10 | 2N3302 |
Motorola |
GENERAL PURPOSE TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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