Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2N3020 |
| Part Number | 2N3020 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | SYMBOL VALUE Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Power Dissipation @ Ta=25º C Power Dissipation@ Tc=25ºC Junction Temperature Storage Temperature VCEO VCBO VEBO ICM PD Tj Tstg THERMAL RESISTANCE Junction to Ambient Junction to Case Rth(j-a) R. |
| Features | . |
2N3020 |
| Part Number | 2N3020 |
| Manufacturer | Central Semiconductor |
| Title | NPN Transistor |
| Description | The CENTRAL SEMICONDUCTOR 2N3019, 2N3020 types are NPN silicon transistors designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power . |
| Features | IC=150mA, TA=-55°C 40 - hFE VCE=10V, IC=500mA 50 - hFE VCE=10V, IC=1.0A 15 - fT VCE=10V, IC=50mA, f=20MHz 100 - Cob VCB=10V, IE=0, f=1.0MHz - 12 Cib VEB=0.5V, IC=0, f=1.0MHz - 60 rb’Cc VCE=10V, IC=10mA, f=4.0MHz - 400 NF VCE=10V, IC=100μA, f=1.0kHz, RS=1.0kΩ - 4.0 2N3020 MIN MAX - 10 - 10 - 10 140 80 7.0 - 0.2 - 0.5 - 1.1 30 100 40 120 40 120 -30 100 15 100 - 12 - 60 - 400 -- UNI. |
2N3020 |
| Part Number | 2N3020 |
| Manufacturer | Comset Semiconductor |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | NPN 2N3019 – 2N3020 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N3019 and 2N3020 are NPN transistors mounted in TO-39 metal case . They are intended for high-current, high-frequency amplifier applications. They feature high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS. |
| Features | high gain and low saturation voltages. Compliance to RoHS ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCBO VEBO IC PD PD TJ TStg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Total Power Dissipation Junction Temperature Storage Temperature range www.DataSheet.net/ Ratings 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3020 2N3019 2N3. |
2N3020 |
| Part Number | 2N3020 |
| Manufacturer | Micro Electronics |
| Title | NPN Silicon Transistor |
| Description | . |
| Features | . |
2N3020 |
| Part Number | 2N3020 |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | 2N3020 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 – Emitter TO39 (TO20. |
| Features | . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3021 |
Motorola |
PNP silicon power transistors |
|
| 2 | 2N3021 |
SSDI |
PNP Transistor |
|
| 3 | 2N3022 |
Motorola |
PNP silicon power transistors |
|
| 4 | 2N3022 |
SSDI |
PNP Transistor |
|
| 5 | 2N3023 |
Motorola |
PNP silicon power transistors |
|
| 6 | 2N3023 |
SSDI |
PNP Transistor |
|
| 7 | 2N3024 |
Motorola |
PNP silicon power transistors |
|
| 8 | 2N3024 |
SSDI |
PNP Transistor |
|
| 9 | 2N3025 |
Motorola |
PNP silicon power transistors |
|
| 10 | 2N3025 |
SSDI |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|