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| Part Number | 2N2484 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2N2484 |
| Manufacturer | SGS-ATES |
| Title | NPN Transistor |
| Description | . |
| Features | . |
| Part Number | 2N2484 |
| Manufacturer | Microsemi |
| Title | NPN SILICON LOW POWER TRANSISTOR |
| Description | TECHNICAL DATA NPN SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/376 Devices 2N2484 Qualified Level JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Opera. |
| Features | or-Emitter Cutoff Current VCE = 45 Vdc Collector-Base Cutoff Current VCB = 45 Vdc VCB = 60 Vdc Collector-Emitter Cutoff Current VCE = 5.0 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120101 Page 1 of 2 2N2484 JAN SERIES ELECTRICAL CHARACTERISTICS (con’t) Characteristics Symbol Min. Max. Unit . |
| Part Number | 2N2484 |
| Manufacturer | Multicomp |
| Title | NPN Bipolar Transistor |
| Description | NPN Bipolar Transistor Features: • Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure : BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc : fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA dc, f = 100. |
| Features |
• Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure : BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc : fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA dc, f = 100 Hz TO-18 www.element14.com www.farnell.com www.newark.com Dimension Millimetres Minimum Maximum A 5.31 5.84 B 4.52 4.95 C 4.32. |
| Part Number | 2N2484 |
| Manufacturer | Seme LAB |
| Title | NPN SILICON AMPLIFIER TRANSISTOR |
| Description | SEME LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) 2N2484 NPN SILICON AMPLIFIER TRANSISTOR FEATURES • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) min. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO1. |
| Features |
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 (0.170) 12.7 (0.500) 5.33 (0.210) min. 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 31 2 TO18 PIN 1 = Emitter PIN 2 = Base PIN 3 = Collector ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO Collector – Base Voltage VCEO Collector – Emitter Voltage VEBO Emitter – Base Voltage IC Collector Current Continuous PD Total De. |
| Part Number | 2N2484 |
| Manufacturer | Central Semiconductor |
| Title | NPN SILICON TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation O. |
| Features | . |
| Part Number | 2N2484 |
| Manufacturer | Comset Semiconductor |
| Title | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Description | NPN 2N2484 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package. They are intended for use in high-performance, low-noise amplifier circuits from audio to highfrequency. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO. |
| Features | urrent Collector Cutoff Current Emitter Cutoff Current Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Test Condition(s) VCB=45 V, IE=0 VCB=45 V, IE=0 Tj=150°C VBE=5.0 V, IC=0 IC=10 mA, IB=0 IC=10 µA, IE=0 IE=10 µA, IC=0 IC=1 µA, VCE =5 V IC=10 µA, VCE =5 V IC=100 µA, VCE =5 V IC=500 µA, VCE =5 V IC=1mA, VCE =5 V IC=10 mA, VCE =5 V IC=10 µA, VCE. |
| Part Number | 2N2484 |
| Manufacturer | Motorola |
| Title | AMPLIFIER TRANSISTOR |
| Description | MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (2 T/ = 25°C Derate above 25°C Total Device Dissipation (a Trj = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VC. |
| Features | . |
| Part Number | 2N2484 |
| Manufacturer | CDIL |
| Title | NPN SILICON PLANAR TRANSISTOR |
| Description | SYMBOL VALUE UNIT Collector -Emitter Voltage VCEO Collector -Base Voltage VCBO Emitter -Base Voltage VEBO Collector Current Continuous IC Power Dissipation @Ta=25 degC PD Derate Above 25 deg C Power Dissipation @Tc=25 degC PD Derate Above 25 deg C Operating And Storage Junction Tj. |
| Features | . |
| Part Number | 2N2484 |
| Manufacturer | VPT |
| Title | NPN Low Power Silicon Transistor |
| Description | 2N2484, 2N2484UA, 2N2484UB NPN Low Power Silicon Transistor Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/376 • Lightweight & Low Power • Military & Other High Reliability Applications • TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UA and UB Package Styles Rev. V3 Elect. |
| Features |
• Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/376 • Lightweight & Low Power • Military & Other High Reliability Applications • TO-18 (TO-206AA), TO-46 (TO-206AB) Surface Mount UA and UB Package Styles Rev. V3 Electrical Characteristics (TA = +25oC unless otherwise specified) Parameter Test Conditions Symbol Units Min. Max. Collector - Emitter Breakdown Voltage Collector - Em. |
similar datasheet
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|---|---|---|---|---|
| 1 | 2N2480 |
Motorola |
DUAL AMPLIFIER TRANSISTOR |
|
| 2 | 2N2480 |
Central Semiconductor |
DUAL NPN TRANSISTORS |
|
| 3 | 2N2480A |
Motorola |
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| 4 | 2N2480A |
Central Semiconductor |
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|
| 5 | 2N2481 |
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| 6 | 2N2481 |
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| 7 | 2N2483 |
SGS-ATES |
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|
| 8 | 2N2483 |
Semicoa |
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| 9 | 2N2484CSM |
Seme LAB |
NPN GENERAL PURPOSE TRANSISTOR |
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| 10 | 2N2484HR |
ST Microelectronics |
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Desde 2024. D4U Semiconductor.
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