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| Part Number | 1SS201 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1SS201 |
| Manufacturer | Toshiba Semiconductor |
| Title | Diode |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS201 Ultra High Speed Switching Application Low forward voltage : VF (3) = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.9pF (typ.) 1SS201 Unit in mm Maximum Ratings (Ta = 25°C) Characteristic Symbol. |
| Features |
, f = 1MHz
― IF = 10mA (Fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
― ― 0.1 µA
― ― 0.5
― 0.9 3.0 pF
― 1.6 4.0 ns
961001EAA2
• TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS200 |
Toshiba Semiconductor |
Diode |
|
| 2 | 1SS220 |
NEC |
(1SS220 / 1SS221) SILICON SWITCHING DIODES |
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| 3 | 1SS226 |
Toshiba Semiconductor |
Switching Diodes |
|
| 4 | 1SS226 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
|
| 5 | 1SS226 |
SEMTECH |
SILICON EPITAXIAL PLANAR DIODE |
|
| 6 | 1SS226 |
LGE |
Switching Diodes |
|
| 7 | 1SS226 |
JCET |
SWITCHING DIODE |
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| 8 | 1SS226 |
MCC |
150mW SWITCHING DIODE |
|
| 9 | 1SS226 |
Galaxy Semi-Conductor |
Surface mount switching diode |
|
| 10 | 1SS226 |
WEJ |
DIODE |
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Desde 2024. D4U Semiconductor.
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