Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 1SS133 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1SS133 |
| Manufacturer | MCC |
| Title | High Speed Switching Diode |
| Description | MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS133 Features • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) • Glass sealed envelope. • Hi. |
| Features |
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates Compliant. See ordering information) • Glass sealed envelope. • High speed. (trr=1.2ns Typ) • High reliability. • Silicon epitaxial planar • Marking : Cathode band and type number • Moisture Sensitivity Level 1 Absolute maximum Ratings Symbol V RM VR IFM IO Isurge PD TJ TSTG Rating Peak Reverse Voltage DC Reverse Voltage Peak Forwar. |
| Part Number | 1SS133 |
| Manufacturer | JGD |
| Title | Silicon Epitaxial Planar Switching Diode |
| Description | Features * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak. |
| Features | * Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133 Silicon Epitaxial Planar Switching Diode ABA C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperatu. |
| Part Number | 1SS133 |
| Manufacturer | Leshan Radio Company |
| Title | SWITCHING DIODES |
| Description | . |
| Features | . |
| Part Number | 1SS133 |
| Manufacturer | EIC |
| Title | HIGH SPEED SWITCHING DIODE |
| Description | 1SS133 FEATURES : • High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE . |
| Features |
:
• High switching speed: max. 4 ns • Continuous reverse voltage:max. 80 V • Repetitive peak reverse voltage:max. 90 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-34 Glass Case Weight: approx. 0.093g TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 HIGH SPEED SWITCHING DIODE DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. D. |
| Part Number | 1SS133 |
| Manufacturer | PACO |
| Title | Silicon Epitaxial Planar Switching Diode |
| Description | 1SS133 Silicon Epitaxial Planar Switching Diode Features • Glass sealed envelope • High speed • High reliability Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Fo. |
| Features |
• Glass sealed envelope • High speed • High reliability Applications • High-speed switching Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1SS130 |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 2 | 1SS131 |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 3 | 1SS132 |
EIC |
HIGH SPEED SWITCHING DIODE |
|
| 4 | 1SS133M |
Taiwan Semiconductor |
Hermetically Sealed Glass Switching Diodes |
|
| 5 | 1SS133S |
JGD |
Silicon Epitaxial Planar Switching Diode |
|
| 6 | 1SS136 |
MCC |
High Speed Switching Diode |
|
| 7 | 1SS139 |
Rohm |
DIODE |
|
| 8 | 1SS13C1 |
HUAGAO |
(1SS13C1 - 1SS15C1) high speed low noise switching diode |
|
| 9 | 1SS101 |
XIN SEMICONDUCTOR |
SUPER HIGH SPEED SWITCHING DIODE |
|
| 10 | 1SS101 |
NEC |
Mixer Diode |
|
Desde 2024. D4U Semiconductor.
|