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| Part Number | 1N5819 |
| Distributor | Stock | Price | Buy |
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| Part Number | 1N5819 |
| Manufacturer | ON Semiconductor |
| Title | SCHOTTKY BARRIER RECTIFIER |
| Description | Axial Lead Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS 1N5817, 1N5818, 1N5819 This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivat. |
| Features |
chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
• Extremely Low VF • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • These are Pb−Free Devices* Mechanical Characteristics: • Cas. |
| Part Number | 1N5819 |
| Manufacturer | AiT Components |
| Title | SCHOTTKY DIODES |
| Description | The 1N5817~1N5819 are available in DO213-AA Package ORDERING INFORMATION Package Type Part Number 1N5817 DO213-AA 1N5818 1N5819 Note SPQ: 2,500pcs/Reel AiT provides all RoHS Compliant Products FEATURES Metal silicon junction, majority carrier conduction Low power loss, high efficiency. |
| Features |
Metal silicon junction, majority carrier conduction Low power loss, high efficiency Guard ring for overvoltage protection High current capability, low forward voltage drop High surge capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Available in DO213-AA Package MECHANICAL DATA Case: MiniMELF (DO-213AA), molded plastic bo. |
| Part Number | 1N5819 |
| Manufacturer | Kexin |
| Title | Schottky Barrier Rectifier Diodes |
| Description | SMD Type Schottky Barrier Rectifier Diodes 1N5817-1N5819 Diodes Features For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction Low Power Loss, High Efficiency High Forward Surge Current Capability DO-214AC(SMA) 1.575 1.397 2 4.597 3.988 2.896 1.67 1 2.489 1.47 U. |
| Features | For Surface Mounted Applications Metal Silicon Junction, Majority Carrier Conduction Low Power Loss, High Efficiency High Forward Surge Current Capability DO-214AC(SMA) 1.575 1.397 2 4.597 3.988 2.896 1.67 1 2.489 1.47 Unit: mm 3.93 3.73 5.283 4.775 2.438 1.981 2.38 2.18 5.49 5.29 Recommended Land Pattern 1.524 0.762 0.203 0.051 0.305 0.152 Maximum Ratings and Electrical Characteristic. |
| Part Number | 1N5819 |
| Manufacturer | Diodes |
| Title | 1.0A SCHOTTKY BARRIER RECTIFIER |
| Description | Pb 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficiency High-Surge Capability High-Current Capability and Low-Forward Voltage Drop For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, an. |
| Features |
Guard Ring Die Construction for Transient Protection Low-Power Loss, High Efficiency High-Surge Capability High-Current Capability and Low-Forward Voltage Drop For Use in Low-Voltage, High-Frequency Inverters, Free Wheeling, and Polarity Protection Application Lead-Free Finish; RoHS Compliant (Notes 1 & 2) For automotive applications requiring specific change control (i.e. parts qual. |
| Part Number | 1N5819 |
| Manufacturer | NXP |
| Title | Schottky barrier diodes |
| Description | The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03. |
| Features |
• Low switching losses • Fast recovery time • Guard ring protected • Hermetically sealed leaded glass package. APPLICATIONS • Low power, switched-mode power supplies • Rectifying • Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass pa. |
| Part Number | 1N5819 |
| Manufacturer | PAN JIT |
| Title | SCHOTTKY BARRIER RECTIFIERS |
| Description | 1N5817~1N5819 SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 40 Volt CURRENT 1 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • For use in low voltage,high frequency inverters ,free wheeling ,and polarit. |
| Features |
• Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • For use in low voltage,high frequency inverters ,free wheeling ,and polarity protection applications . • Lead free in compliance with EU RoHS 2011/65/EU directive MECHANICAL DATA • Case: DO-41 Molded plastic • Terminals: Axial leads, solderable per MIL-STD-750,Method. |
| Part Number | 1N5819 |
| Manufacturer | Multicomp |
| Title | Power Diodes - Schottky |
| Description | 1N5810 Series Power Diodes - Schottky 1A Axial DO-41 Features: • Low forward voltage drop . • High current capability. • High reliability. • High surge current capability. Mechanical Data: Cases Lead Polarity High temperature soldering guaranteed : Moulded plastic DO-41. : Axial leads, solderabl. |
| Features |
• Low forward voltage drop . • High current capability. • High reliability. • High surge current capability. Mechanical Data: Cases Lead Polarity High temperature soldering guaranteed : Moulded plastic DO-41. : Axial leads, solderable per MIL-STD-202, Method 208 guaranteed. : Colour band denotes cathode end. : 260°C/10 seconds/0.375”, (9.5mm) lead lengths at 5lbs., (2.3kg) tension. Dimensions . |
| Part Number | 1N5819 |
| Manufacturer | Vishay Siliconix |
| Title | Schottky Barrier Rectifiers |
| Description | www.vishay.com 1N5817, 1N5818, 1N5819 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF TJ max. Package 1.0 A 20 V, 30 V, 40 V 25 A 0.45 V, 0.55 V, 0.60 V 125 °C DO-41 (DO-204AL) Circuit configuration Single FEATURES. |
| Features |
• Guardring for overvoltage protection • Very small conduction losses • Extremely fast switching • Low forward voltage drop • High frequency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and po. |
| Part Number | 1N5819 |
| Manufacturer | Taiwan Semiconductor |
| Title | Schottky Barrier Rectifiers |
| Description | only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC pr. |
| Features |
● AEC-Q101 qualified available ● Low forward voltage drop ● Guard ring for overvoltage protection ● High surge current capability ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● DC to DC converter KEY PARAMETERS PARAMETER VALUE UNIT IF 1 A VRRM 20 - 40 V IFSM 30 A TJ MAX 125 °C Package DO-204AL (DO-41) Conf. |
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|---|---|---|---|---|
| 1 | 1N5810 |
DSI |
DIODE |
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| 2 | 1N5810 |
Solid State |
RECTIFIERS |
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| 3 | 1N5810 |
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| 4 | 1N5810-M |
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| 5 | 1N5811 |
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| 6 | 1N5811 |
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VOID-LESS HERMETICALLY SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS |
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| 7 | 1N5811 |
Semtech |
SUPERFAST RECTIFIER DIOSE |
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| 8 | 1N5811 |
MA-COM |
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| 9 | 1N5811 |
EIC |
ULTRAFAST RECOVERY RECTIFIER DIODES |
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| 10 | 1N5811 |
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Desde 2024. D4U Semiconductor.
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