Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 1N3830 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1N3830 |
| Manufacturer | Motorola |
| Title | ZENER REGULATOR DIODES |
| Description | IN3821 thru IN3830 SERIES (1M3.3AZ10 thru 1M7.5AZ10) IN3016 thru IN3051 SERIES (1M6.8Z thru 1M200Z) ® MOTOROLA l)p~igTlPI·~ Data S h p p t 1.0 WATT METAL SILICON ZENER DIODES a complete series of 1.0 Watt Zener Diodes with limits and operating characteristics that reflect the superior capabilitie. |
| Features | ge Junction Temperature Range Symbol Value 1.0 6.67 -65 to +175 Unit Lead Temperature 230°C at a distance not tess than 1/16" from the casefar 10seconds. MECHANICAL CHARACTERISTICS CASE: Welded, hermetically sealed metal and glass. DIMENSIONS: See outline drawing. FINISH: All external surfaces are corrosion-resistant and leads are readily solderable and weldable. POLARITV: Cathode connected . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3830A |
Microsemi Corporation |
1W ZENER DIODES |
|
| 2 | 1N3831 |
American Power Devices |
(1N3831 - 1N3845) Four Layer Diodes |
|
| 3 | 1N3831 |
Microwave Diode |
(1N3831 - 1N3846) Silicon Planar Thyristor Diodes |
|
| 4 | 1N3832 |
American Power Devices |
(1N3831 - 1N3845) Four Layer Diodes |
|
| 5 | 1N3832 |
Microwave Diode |
(1N3831 - 1N3846) Silicon Planar Thyristor Diodes |
|
| 6 | 1N3833 |
American Power Devices |
(1N3831 - 1N3845) Four Layer Diodes |
|
| 7 | 1N3833 |
Microwave Diode |
(1N3831 - 1N3846) Silicon Planar Thyristor Diodes |
|
| 8 | 1N3834 |
American Power Devices |
(1N3831 - 1N3845) Four Layer Diodes |
|
| 9 | 1N3834 |
Microwave Diode |
(1N3831 - 1N3846) Silicon Planar Thyristor Diodes |
|
| 10 | 1N3835 |
American Power Devices |
(1N3831 - 1N3845) Four Layer Diodes |
|
Desde 2024. D4U Semiconductor.
|