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| Part Number | 1N3766 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 1N3766 |
| Manufacturer | GeneSiC |
| Title | Silicon Standard Recovery Diode |
| Description | Silicon Standard Recovery Diode Features • High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum rati. |
| Features |
• High Surge Capability • Types from 700 V to 1000 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N3765 thru 1N3768R VRRM = 700 V - 1000 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N3765 (R) 1N3766 (R) 1N3767 (R) 1N3768 (R) Repetitive peak r. |
| Part Number | 1N3766 |
| Manufacturer | Digitron Semiconductors |
| Title | STANDARD RECOVERY RECTIFIERS |
| Description | 1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), s. |
| Features |
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse current Maximum peak reverse current Maximu. |
| Part Number | 1N3766 |
| Manufacturer | Diotec Semiconductor |
| Title | Silicon-Power Rectifiers |
| Description | 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse 37 35 A 50…1000 V DO-5 6g Ø3.5 Type Weight approx. – . |
| Features |
tung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing – Grenzlastintegral, t < 10 ms Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur. |
| Part Number | 1N3766 |
| Manufacturer | International Rectifier |
| Title | 35/40/and 60 Amp Power Silicon Rectifier Diodes |
| Description | . |
| Features | . |
| Part Number | 1N3766 |
| Manufacturer | Microsemi |
| Title | Silicon Power Rectifier |
| Description | . |
| Features | . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N3765 |
Digitron Semiconductors |
STANDARD RECOVERY RECTIFIERS |
|
| 2 | 1N3765 |
International Rectifier |
35/40/and 60 Amp Power Silicon Rectifier Diodes |
|
| 3 | 1N3765 |
Microsemi |
Silicon Power Rectifier |
|
| 4 | 1N3765 |
Vishay |
Power Silicon Rectifier Diodes |
|
| 5 | 1N3765 |
America Semiconductor |
Silicon Standard Recovery Diode |
|
| 6 | 1N3765 |
GeneSiC |
Silicon Standard Recovery Diode |
|
| 7 | 1N3765R |
America Semiconductor |
Silicon Standard Recovery Diode |
|
| 8 | 1N3765R |
GeneSiC |
Silicon Standard Recovery Diode |
|
| 9 | 1N3766R |
America Semiconductor |
Silicon Standard Recovery Diode |
|
| 10 | 1N3766R |
GeneSiC |
Silicon Standard Recovery Diode |
|
Desde 2024. D4U Semiconductor.
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