Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
1N17 |
| Part Number | 1N17 |
| Manufacturer | Rectron Semiconductor |
| Title | SCHOTTKY BARRIER RECTIFIER |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High re. |
| Features | * * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability R-1 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.12 gram .787 (20.0) MIN. .025 (0.65) DIA. .021 (0.55) . |
1N17 |
| Part Number | 1N17 |
| Manufacturer | STAR SEA |
| Title | SCHOTTKY BARRIER RECTIFIER |
| Description | 1N17 THRU 1N19 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 40Volts Forward Current - 1.0 Ampere R-1 0.102 (2.6) 0.091 (2.3) DIA. 1.0 (25.4) MIN. 0.140(3.50) 0.114(2.90) 0.025 (0.65) 0.021 (0.55) DIA. 1.0 (25.4) MIN. Dimensions in inches and (millimeters) FEATURES Plastic package has Un. |
| Features | Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Guardring for overvoltage protection Low power loss,high efficiency High current capability,low forward voltage drop High surge capability For use in low voltage,high frequency inverters, free wheeling,and polarity protection applications High temperature soldering guara. |
1N17 |
| Part Number | 1N17 |
| Manufacturer | GALAXY ELECTRICAL |
| Title | SCHOTTKY BARRIER RECTIFIERS |
| Description | BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIERS 1N17---1N19 VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters fr. |
| Features | Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 MECHANICAL DATA Case:JEDEC R--1,molded plastic Terminals: Axial lead ,solderable per MIL- STD-202,Method 208 . |
1N17 |
| Part Number | 1N17 |
| Manufacturer | SEMTECH |
| Title | SCHOTTKY BARRIER RECTIFIERS |
| Description | 1N17 ~ 1N19 SCHOTTKY BARRIER RECTIFIERS Reverse Voltage – 20 to 40 Volts Forward current – 1.0 Amperes Features R-1 • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability • For use in lo. |
| Features |
R-1
• Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications Mechanical data • Case: R-1 molded plastic body • Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026 •. |
1N17 |
| Part Number | 1N17 |
| Manufacturer | LGE |
| Title | Schottky Barrier Rectifiers |
| Description | 1N17-1N19 Schottky Barrier Rectifiers VOLTAGE RANGE: 20 --- 40 V CURRENT: 1.0 A Features Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and pol. |
| Features | Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free xxxx wheeling,and polarity protection applications The plastic material carries U/L recognition 94V-0 Mechanical Data Case:JEDEC R--1,molded plastic Polarity: Color band denotes cathode Weight: 0.007 ounces,0.20. |
1N17 |
| Part Number | 1N17 |
| Manufacturer | Micro Commercial Components |
| Title | 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts |
| Description | MCC Features • • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N17 THRU 1N19 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency Low Forward Voltage Drop Metal Silicon . |
| Features |
• • • • • omponents 21201 Itasca Street Chatsworth !"# $ % !"# 1N17 THRU 1N19 1.0 Amp Schottky Barrier Rectifier 20 to 40 Volts High Current Capability Low Power loss High Efficiency Low Forward Voltage Drop Metal Silicon junction, majority carrier conduction Maximum Ratings • • • • Operating Temperature: -55°C to +125°C Storage Te. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N100 |
BKC |
Gold Bonded Diode |
|
| 2 | 1N100A |
BKC |
Gold Bonded Diode |
|
| 3 | 1N102 |
BKC |
Gold Bonded Diode |
|
| 4 | 1N103 |
BKC |
Gold Bonded Diode |
|
| 5 | 1N104 |
BKC |
Gold Bonded Diode |
|
| 6 | 1N1064 |
Microsemi Corporation |
SILICON POWER RECTIFIER |
|
| 7 | 1N1064 |
Solid State |
SILICON POWER RECTIFIER |
|
| 8 | 1N1065 |
Microsemi Corporation |
SILICON POWER RECTIFIER |
|
| 9 | 1N1065 |
Solid State |
SILICON POWER RECTIFIER |
|
| 10 | 1N1066 |
Microsemi Corporation |
SILICON POWER RECTIFIER |
|
Desde 2024. D4U Semiconductor.
|