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1N1190 Silicon Standard Recovery Diode


1N1190
Part Number 1N1190
Distributor Stock Price Buy
International Rectifier
1N1190
Part Number 1N1190
Manufacturer International Rectifier
Title 35/40/and 60 Amp Power Silicon Rectifier Diodes
Description .
Features .
DSI
1N1190
Part Number 1N1190
Manufacturer DSI
Title DIODE
Description Technical Data DIODE maximum ratings Voltage, Reverse (VR) Voltage, Reverse Peak (VRM) Current at VR = OV (IO) Current Average Rectified (IF) Current Surge Peak (IFM) Current, Surge (IFM) at tp = 8.3 ms Max. Power Dissipation (PT) at TC = 25 °C Max. Thermal Resistance (Rth J-C) Max. Junction Tempe.
Features .
Naina Semiconductor
1N1190
Part Number 1N1190
Manufacturer Naina Semiconductor
Title Standard Recovery Diode
Description Naina Semiconductor Ltd. 1N1187 thru 1N1190R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless o.
Features
 Glass passivated die
 Low forward voltage drop
 High surge capability
 Low leakage current
 Normal and Reverse polarity
 Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1187(R) Repetitive peak reverse voltage VRRM 300 RMS reverse voltage VRMS 210 DC blocking voltage VDC 300 Continuous forwar.
Digitron Semiconductors
1N1190
Part Number 1N1190
Manufacturer Digitron Semiconductors
Title STANDARD RECOVERY RECTIFIERS
Description 1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), s.
Features
 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse current Maximum peak reverse current Maximu.
Diotec Semiconductor
1N1190
Part Number 1N1190
Manufacturer Diotec Semiconductor
Title Silicon-Power Rectifiers
Description 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse 37 35 A 50…1000 V DO-5 6g Ø3.5 Type Weight approx. – .
Features tung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing
  – Grenzlastintegral, t < 10 ms Operating junction temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur.
GeneSiC
1N1190
Part Number 1N1190
Manufacturer GeneSiC
Title Silicon Standard Recovery Diode
Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stu.
Features
• High Surge Capability
• Types from 400 to 600 V VRRM
• Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1188 thru 1N1190R VRRM = 400 V - 600 V IF = 35 A AC DO-5 Package CA Stud Stud (R) Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions 1N1188 (R.
Microsemi
1N1190
Part Number 1N1190
Manufacturer Microsemi
Title Silicon Power Rectifier
Description .
Features .

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