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1N1184 35/40/and 60 Amp Power Silicon Rectifier Diodes


1N1184
Part Number 1N1184
Distributor Stock Price Buy
Diotec Semiconductor
1N1184
Part Number 1N1184
Manufacturer Diotec Semiconductor
Title Silicon-Power Rectifiers
Description 1N 1183 ... 1N 1190, 1N 3766, 1N 3768 PBY 301 ... PBY 307 Silicon-Power Rectifiers Silizium-Leistungs-Gleichrichter 13 14 Nominal current – Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Metal case – Metallgehäuse 37 35 A 50…1000 V DO-5 6g Ø3.5 Type Weight approx. – .
Features tung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing
  – Grenzlastintegral, t < 10 ms Operating junction temperature
  – Sperrschichttemperatur Storage temperature
  – Lagerungstemperatur.
Digitron Semiconductors
1N1184
Part Number 1N1184
Manufacturer Digitron Semiconductors
Title STANDARD RECOVERY RECTIFIERS
Description 1N1183-1N1190, 1N3765-1N3768 High-reliability discrete products and engineering services since 1977 STANDARD RECOVERY RECTIFIERS FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), s.
Features
 Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
 Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Characteristics Average forward current Maximum surge current Maximum I2t for fusing Maximum peak forward voltage Maximum peak reverse current Maximum peak reverse current Maximu.
America Semiconductor
1N1184
Part Number 1N1184
Manufacturer America Semiconductor
Title Silicon Standard Recovery Diode
Description Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
Features .
GeneSiC
1N1184
Part Number 1N1184
Manufacturer GeneSiC
Title Silicon Standard Recovery Diode
Description Silicon Standard Recovery Diode Features • High Surge Capability • Types from 50 to 300 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, a.
Features
• High Surge Capability
• Types from 50 to 300 V VRRM
• Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. 1N1183 thru 1N1187R VRRM = 50 V - 300 V IF = 35 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1187 (R) Repetitive peak reverse.
Naina Semiconductor
1N1184
Part Number 1N1184
Manufacturer Naina Semiconductor
Title Standard Recovery Diode
Description Naina Semiconductor Ltd. 1N1183 thru 1N1186R Standard Recovery Diode, 35A Features  Glass passivated die  Low forward voltage drop  High surge capability  Low leakage current  Normal and Reverse polarity  Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless o.
Features
 Glass passivated die
 Low forward voltage drop
 High surge capability
 Low leakage current
 Normal and Reverse polarity
 Metric and UNF threads available DO-203AB (DO-5) Maximum Ratings (TJ = 25oC, unless otherwise noted) Parameter Test Conditions Symbol 1N1183(R) Repetitive peak reverse voltage VRRM 50 RMS reverse voltage VRMS 35 DC blocking voltage VDC 50 Continuous forward c.
Microsemi
1N1184
Part Number 1N1184
Manufacturer Microsemi
Title Silicon Power Rectifier
Description .
Features .

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