Distributor | Stock | Price | Buy |
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13003 |
Part Number | 13003 |
Manufacturer | Elite Enterprises |
Title | NPN Epitaxial Silicon Transistor |
Description | 13003 NPN Epitaxial Silicon Transistor TO-220 HIGH VOLTAGE SWITCHING APPLICATIONS Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=1500mW Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Col. |
Features | IE=1mA, IC=0 VCB=700V, IE=0 VCE=400V, IB=0 VEB=9V, IC=0 VCE=2V, IC=0.5A VCE=10V, IC=0.5mA IC=1A IB=250mA IC=1A, IB=250mA IE=2A VCE=10V, IC=100mA f=1MHz IC=1A, IB1=-1B2=0.2mA, Vcc= 100V 5 0.5 2.5 MHz µS µS 8 5 1 1.2 3 V V V Min 700 400 9 1 500 1 40 Max Unit V V V mA £g A mA hFE(1) CLASSIFICATION Classification hFE(1) 8-15 15-20 20-25 25-30 30-35 35-40 Elite Enterprises (H.K.) Co., Ltd. Flat 2505. |
13003 |
Part Number | 13003 |
Manufacturer | HSiN |
Title | HIGH VOLTAGE AND HIGH SPEED SWITCH |
Description | 13003 STANDARD · · 65 HSiN 13003 PEFORMANCE CURVES 1 Ic(A) SOA (DC) 120 100 % Pc Tj 0.1 80 IS/B 60 Ptot 0.01 40 20 0.001 1 hFE 10 100 Vce(V) 0 1000 0 50 100 150 Tj( ) 200 hFE - Ic 100 100 hFE hFE - Ic Tj=125 Tj=25 Tj=125 Tj=25 10 Tj= − 40 10 Tj= − 40 Vce=1.5V . |
Features | . |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 1300 |
Nihon Dempa Kogyo |
Crystal Clock Oscillators | |
2 | 1300-102-4xx |
Methode Electronics |
2.54mm IDC Connector | |
3 | 13001 |
Elite |
NPN Epitaxial Silicon Transistor | |
4 | 13001-2 |
Jingdao |
NPN power transistor | |
5 | 13001-A |
Jingdao |
NPN power transistor | |
6 | 13001S |
ETC |
Low-frequency amplification environment rated bipolar transistors | |
7 | 13001S8D |
JTD |
NPN Transistor | |
8 | 13002AG |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
9 | 13002AH |
Unisonic Technologies |
NPN SILICON TRANSISTOR | |
10 | 13003AD |
Jingdao |
Bipolar Junction Transistor |