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STW55NM60N |
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| Part Number | STW55NM60N |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of... |
| Features |
Type STW55NM60N
VDSS (@Tjmax)
650 V
RDS(on) max
< 0.060 Ω
ID 51 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table ... |
| Document |
 STW55NM60N Data Sheet
PDF 301.22KB |
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