STW48NM60N |
Part Number | STW48NM60N |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to ... |
Features |
Order codes STW48NM60N
VDSS @ TJmax
650 V
RDS(on) max
< 0.07 Ω
ID 44 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schemati... |
Document |
STW48NM60N Data Sheet
PDF 339.97KB |
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