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STPSC8TH13TI |
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| Part Number | STPSC8TH13TI |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a ... |
| Features |
No or negligible reverse recovery Switching behavior independent of temperature Suited for specific bridge-less topologies High forward surge capability Insulated package: – Capacitance: 7 pF – Insulated voltage: 2500 V rms Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The mi... |
| Document |
 STPSC8TH13TI Data Sheet
PDF 170.55KB |
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Desde 2024. D4U Semiconductor.
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